Multi-level Cells and Quantized Conductance Characteristics of Al2O3-Based RRAM Device for Neuromorphic System
Recently, various resistance-based memory devices are being studied to replace charge-
based memory devices to satisfy high-performance memory requirements. Resistance …
based memory devices to satisfy high-performance memory requirements. Resistance …
Electronic synaptic plasticity and analog switching characteristics in Pt/TiOx/AlOx/AlTaON/TaN multilayer RRAM for artificial synapses
In this work, electronic synaptic plasticity and analog bipolar switching behavior by using a
Pt/TiO x/AlO x/AlTaON/TaN multilayer resistive random-access memory (RRAM) device were …
Pt/TiO x/AlO x/AlTaON/TaN multilayer resistive random-access memory (RRAM) device were …
Unveiling the Potential of HfO2/WS2 Bilayer Films: Robust Analog Switching and Synaptic Emulation for Advanced Memory and Neuromorphic Computing
Nonvolatile memories using two-dimensional materials and high-k oxides have gained
attention for their potential to achieve robust analog switching, easy memristive device …
attention for their potential to achieve robust analog switching, easy memristive device …
Nano-crystalline ZnO memristor for neuromorphic computing: Resistive switching and conductance modulation
In this work, a nano-crystalline (NC) ZnO-based memristor was fabricated to investigate the
short-term memory characteristics for reservoir computing systems. The crystalline structure …
short-term memory characteristics for reservoir computing systems. The crystalline structure …
Tailoring the electrical homogeneity, large memory window, and multilevel switching properties of HfO2-based memory through interface engineering
Two-terminal resistive switching (RS) memories have attracted considerable interest for use
in storage class memory and in-memory computing applications. However, resistive random …
in storage class memory and in-memory computing applications. However, resistive random …
Diverse synaptic weight adjustment of bio-inspired ZrOx-based memristors for neuromorphic system
In this article, we demonstrate the bio-inspired synaptic features of the TiN/ZrO x/Pt capacitor
structure for neuromorphic engineering. The chemical and material compositions and the …
structure for neuromorphic engineering. The chemical and material compositions and the …
Enhanced memory window and efficient resistive switching in stabilized BaTiO3-based RRAM through incorporation of Al2O3 interlayer
As artificial intelligence and big data become increasingly prevalent, resistive random-
access memory (RRAM) has become one of the most promising alternatives for storing …
access memory (RRAM) has become one of the most promising alternatives for storing …
Exploration of Analog Synaptic Plasticity and Convolutional Neural Network Simulation in Bilayer TiOxNy/SnOx Memristor for Neuromorphic Systems
In this study, a TiN/SnO2/Pt sandwich structure is explored for its dual functionalities in
electronic synapses and multistate memory. The SnO2 layer is fabricated via reactive …
electronic synapses and multistate memory. The SnO2 layer is fabricated via reactive …
Resistive state relaxation time in ZrO2 (Y)-based memristive devices under the influence of external noise
MN Koryazhkina, DO Filatov, VA Shishmakova… - Chaos, Solitons & …, 2022 - Elsevier
The effects of external digitally synthesized Gaussian noise on the resistive state relaxation
time of a ZrO 2 (Y)-based memristive device when switching from a low resistance state to a …
time of a ZrO 2 (Y)-based memristive device when switching from a low resistance state to a …
Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering
For neuromorphic computing and high-density data storage memory, memristive devices
have recently gained a lot of interest. So far, memristive devices have suffered from …
have recently gained a lot of interest. So far, memristive devices have suffered from …