Optical-phonon behavior in The role of microscopic strains and ionic plasmon coupling
We present an experimental and theoretical investigation of long-wavelength optical-
phonon behavior in Ga 1− x In x As alloys. We propose a model which accounts …
phonon behavior in Ga 1− x In x As alloys. We propose a model which accounts …
Composition, Optical Resonances, and Doping of InP/InGaP Nanowires for Tandem Solar Cells: a Micro-Raman Analysis
I Mediavilla, JL Pura, VG Hinojosa, B Galiana… - ACS …, 2024 - ACS Publications
We present a micro-Raman study of InP/InGaP tandem junction photovoltaic nanowires.
These nanowires render possible InGaP compositions that cannot be made in thin films due …
These nanowires render possible InGaP compositions that cannot be made in thin films due …
Tensile and compressive strain relief in epilayers grown on InP probed by Raman scattering
Strain relaxation has been investigated by means of Raman scattering in strained In x Ga 1−
x As layers (with x ranging from 0 to 1) grown on In 0.53 Ga 0.47 As/InP (001). The epilayers …
x As layers (with x ranging from 0 to 1) grown on In 0.53 Ga 0.47 As/InP (001). The epilayers …
Atomic-scale structure of disordered P alloys
Extended x-ray-absorption fine-structure experiments have previously demonstrated that for
each composition x, the sample average of all nearest-neighbor AC distances in an A 1− x B …
each composition x, the sample average of all nearest-neighbor AC distances in an A 1− x B …
Quantized Conduction and High Mobility in Selectively Grown InxGa1–xAs Nanowires
We report measured quantized conductance and quasi-ballistic transport in selectively
regrown In0. 85Ga0. 15As nanowires. Very low parasitic resistances obtained by regrowth …
regrown In0. 85Ga0. 15As nanowires. Very low parasitic resistances obtained by regrowth …
Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells
H Dong, J Sun, S Ma, J Liang, T Lu, X Liu, B Xu - Nanoscale, 2016 - pubs.rsc.org
InGaAs/GaAsP multiple quantum wells (MQWs) were grown by metal–organic chemical
vapor deposition on vicinal GaAs (001) substrates with different miscut angles of 0°, 2° and …
vapor deposition on vicinal GaAs (001) substrates with different miscut angles of 0°, 2° and …
In Situ Deep-Level Transient Spectroscopy and Dark Current Measurements of Proton-Irradiated InGaAs Photodiodes
GT Nelson, G Ouin, SJ Polly, KB Wynne… - … on Nuclear Science, 2020 - ieeexplore.ieee.org
In0. 53Ga0. 47As photodiodes were irradiated by 2.0-and 3.5-MeV protons at low
temperature to study the effects of displacement damage. Defect spectroscopy and dark …
temperature to study the effects of displacement damage. Defect spectroscopy and dark …
Debye–Einstein model and anomalies of heat capacity temperature dependences of solid solutions at low temperatures
VV Novikov - Journal of Thermal Analysis and Calorimetry, 2019 - Springer
An approach is proposed for analysing the deviations of the heat capacity C p (T) of solid
solutions from the Kopp–Neumann rule (KNR) Δ C (T)= C p (T)− C KNR (T). Temperature …
solutions from the Kopp–Neumann rule (KNR) Δ C (T)= C p (T)− C KNR (T). Temperature …
Local structure of from joint high-resolution and differential pair distribution function analysis
V Petkov, IK Jeong, F Mohiuddin-Jacobs… - Journal of Applied …, 2000 - pubs.aip.org
High resolution total and indium differential atomic pair distribution functions (PDFs) for In
0.5 Ga 0.5 As alloys have been obtained by high energy and anomalous x-ray diffraction …
0.5 Ga 0.5 As alloys have been obtained by high energy and anomalous x-ray diffraction …
Determination of the far-infrared dielectric function of a thin InGaAs layer using a detuned Salisbury screen
We present a method to determine the far-infrared dielectric function parameters of a thin
In_0. 53Ga_0. 47As layer. We use a detuned Salisbury screen configuration to enhance the …
In_0. 53Ga_0. 47As layer. We use a detuned Salisbury screen configuration to enhance the …