Complete characterization of GaAs gradient-elastic tensors and reconstruction of internal strain in GaAs/AlGaAs quantum dots using nuclear magnetic resonance
Recently, we have calibrated the diagonal components S 11= S xxxx of the GaAs gradient
elastic tensor S ijkl using nuclear magnetic resonance (NMR) and photoluminescence …
elastic tensor S ijkl using nuclear magnetic resonance (NMR) and photoluminescence …
Interface-sensitive nuclear magnetic resonance at a semiconductor heterojunction using hyperpolarization
A Goto, K Hashi, S Ohki, T Shimizu - Physical Review Materials, 2017 - APS
We demonstrate an interface-sensitive NMR in a semiconducting nanostructure, where an
NMR signal from the minute heterojunction region of a model heterojunction structure (I n …
NMR signal from the minute heterojunction region of a model heterojunction structure (I n …
Optically Pumped Nuclear Magnetic Resonance Investigation of Strain and Doping Effects in Gallium Arsenide
JT Tokarski III - 2019 - search.proquest.com
This work focuses on employing the use of elastic strain or doping to increase the nuclear
spin polarization that results after optical pumping in GaAs. Usually, in III-V semiconductors …
spin polarization that results after optical pumping in GaAs. Usually, in III-V semiconductors …