Review of Si-based GeSn CVD growth and optoelectronic applications
Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin… - Nanomaterials, 2021 - mdpi.com
GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
Technology evolution for silicon nanoelectronics: postscaling technology
S Zaima - Japanese Journal of Applied Physics, 2013 - iopscience.iop.org
Si ultralarge-scale integration (ULSI) circuits have been developed by downscaling device
dimensions on the basis of the concept of scaling, following Moore's law. However …
dimensions on the basis of the concept of scaling, following Moore's law. However …
[HTML][HTML] Ge1-ySny (y= 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties
Novel hydride chemistries are employed to deposit light-emitting Ge 1-y Sn y alloys with y≤
0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si …
0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si …
Ternary and quaternary Ni (Si) Ge (Sn) contact formation for highly strained Ge p-and n-MOSFETs
The formation of new ternary NiGeSn and quaternary NiSiGeSn alloys has been
investigated to fabricate metallic contacts on high Sn content, potentially direct bandgap …
investigated to fabricate metallic contacts on high Sn content, potentially direct bandgap …
Dopant Segregation and Nickel Stanogermanide Contact Formation on Source/Drain
P+ Ge 1-x Sn x is a promising source and drain (S/D) stressor material for Ge p-MOSFETs,
and an S/D material in Ge 1-x Sn x channel p-MOSFETs. In this paper, we investigate the …
and an S/D material in Ge 1-x Sn x channel p-MOSFETs. In this paper, we investigate the …
Impact of Pt on the phase formation sequence, morphology, and electrical properties of Ni (Pt)/Ge0. 9Sn0. 1 system during solid-state reaction
A Quintero, P Gergaud, J Aubin, JM Hartmann… - Journal of Applied …, 2018 - pubs.aip.org
Ni-GeSn based materials are promising in order to obtain contacts in complementary metal
oxide semiconductor and Si photonic devices. In this work, a systematic and comprehensive …
oxide semiconductor and Si photonic devices. In this work, a systematic and comprehensive …
Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
High-mobility strained Ge0. 958Sn0. 042 p-channel metal-oxide-semiconductor field-effect-
transistors (p-MOSFETs) with ammonium sulfide [(NH4) 2S] surface passivation were …
transistors (p-MOSFETs) with ammonium sulfide [(NH4) 2S] surface passivation were …
Strain engineering in GeSnSi materials
HH Radamson, M Noroozi, A Jamshidi… - ECS …, 2013 - iopscience.iop.org
In this study, Ge1-xy SnxSiy layers (0.01≤ x≤ 0.06 and 0≤ y≤ 0.12) using Ge2H6, SnCl4
(SnD4) and Si2H6 have successfully grown at 290-310 C on Ge virtual layer on Si (100) by …
(SnD4) and Si2H6 have successfully grown at 290-310 C on Ge virtual layer on Si (100) by …
Use of nanosecond laser annealing for thermally stable Ni (GeSn) alloys
A Quintero, PA Alba, JM Hartmann… - IEEE Journal of the …, 2023 - ieeexplore.ieee.org
In this study, we have conclusively used UV-nanosecond laser annealing (UV-NLA) as an
alternative to classical rapid thermal annealing (RTA) for the formation of stable Ni-GeSn …
alternative to classical rapid thermal annealing (RTA) for the formation of stable Ni-GeSn …
Molecular beam epitaxy grown GeSn pin photodetectors integrated on Si
GeSn pin photodetectors with a low Sn mole fraction made by molecular beam epitaxy on Si
substrates show higher optical responsivities for wavelength λ> 1400nm compared with pin …
substrates show higher optical responsivities for wavelength λ> 1400nm compared with pin …