Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …

In the last ten years, large improvements in the epitaxial silicon carbide processes have
been made. The introduction of chloride precursors, the epitaxial growth on large area …

This paper surveys extended defects in 4H‐SiC epilayers and reports recent results
concerning fast epitaxial growth. Synchrotron X‐ray topography, transmission electron …

This paper reports recent advances in high-quality 4H-SiC epitaxial growth. The modern 4H-
SiC epitaxial reactors, techniques to improve growth rates and large-diameter uniformity and …

The paths of basal plane dislocations (BPDs) through 4 H-SiC epitaxial layers grown on
wafers with an 8 offcut were tracked using ultraviolet photoluminescence imaging. The …

We use molecular dynamics (MD) simulation with numerical characterisation and statistical
analysis to study the mechanisms of damage evolution and p-type doping efficiency by …

The formation of extended defects in the 4H–SiC epilayer induced by the implantation/
annealing process was investigated using synchrotron reflection x-ray topography, KOH …

Shockley partial dislocations in 4H-SiC were observed using monochromatic synchrotron X-
ray topography with a grazing-incidence Bragg-case geometry, that is, Berg–Barrett …

A model is presented for the formation mechanism of dislocation half-loop arrays formed
during the homoepitaxial growth of 4 H-SiC⁠. The reorientation during glide of originally …