Recent advances in light sources on silicon
Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …
research. Several important breakthroughs were made in this field in the past few years. In …
[HTML][HTML] Heteroepitaxial growth of III-V semiconductors on silicon
Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …
Continuous-wave electrically pumped 1550 nm lasers epitaxially grown on on-axis (001) silicon
Heteroepitaxy of III–V compound semiconductors on industry standard (001) silicon (Si)
substrates is highly desirable for large-scale electronic and photonic integrated circuits …
substrates is highly desirable for large-scale electronic and photonic integrated circuits …
A Review Chemical Vapor Deposition: Process And Application
AA Dinata, AM Rosyadi, S Hamid, R Zainul - 2018 - osf.io
Abstract Chemical Vapor Deposition merupakan metode deposisi yang digunakan untuk
menghasilkan bahan padat berkualitas tinggi dan berkinerja tinggi yang biasanya dibawah …
menghasilkan bahan padat berkualitas tinggi dan berkinerja tinggi yang biasanya dibawah …
Structure and morphology of GaInAsP solid solutions on GaAs substrates grown by pulsed laser deposition
AS Pashchenko, OV Devitsky, LS Lunin, IV Kasyanov… - Thin Solid Films, 2022 - Elsevier
GaInAsP solid solutions are synthesized on GaAs substrates by pulsed laser deposition and
the effect of the laser fluence on the morphology and structure of the films is studied. It is …
the effect of the laser fluence on the morphology and structure of the films is studied. It is …
Comparison of growth structures for continuous-wave electrically pumped 1.55 μm quantum dash lasers grown on (001) Si
Semiconductor lasers directly grown on silicon offer great potential as critical components in
high-volume, low-cost integrated silicon photonics circuits. Although InAs/InP quantum dash …
high-volume, low-cost integrated silicon photonics circuits. Although InAs/InP quantum dash …
GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates
L Monge-Bartolome, B Shi, B Lai, G Boissier… - Optics …, 2021 - opg.optica.org
We report GaSb-based laser diodes (LDs) grown on on-axis (001) Si substrates and emitting
at 2.3 µm. Two series of LDs were studied and compared. For the first series, a GaAs-based …
at 2.3 µm. Two series of LDs were studied and compared. For the first series, a GaAs-based …
Toward all MOCVD grown InAs/GaAs quantum dot laser on CMOS-compatible (001) silicon
Toward All MOCVD Grown InAs/GaAs Quantum Dot Laser on CMOS-compatible (001) Silicon
Page 1 JTu2A.82.pdf CLEO 2019 © OSA 2019 Toward All MOCVD Grown InAs/GaAs Quantum …
Page 1 JTu2A.82.pdf CLEO 2019 © OSA 2019 Toward All MOCVD Grown InAs/GaAs Quantum …
MOCVD growth of InP-based 1.3 μm quantum dash lasers on (001) Si
Quantum dot and quantum dash (QDash) lasers exhibit lower threshold, less temperature
sensitivity, and larger modulation bandwidths than the conventional quantum well lasers …
sensitivity, and larger modulation bandwidths than the conventional quantum well lasers …
Growth of III–V semiconductors and lasers on silicon substrates by MOCVD
Long-lasting efforts have been devoted to perfecting the crystalline quality of III–V compound
semiconductors on silicon substrates, where epitaxial growth by MOCVD systems is of …
semiconductors on silicon substrates, where epitaxial growth by MOCVD systems is of …