Broad-area diode lasers with high output power and low lateral divergence angle are highly
desired for extensive scientific and industrial applications. Here, we report on the epitaxial …

Improving the power and efficiency of 9xx-nm broad-area laser diodes has a great help in
reducing the cost of laser systems and expanding applications. This letter presents an …

Semiconductor lasers with high power conversion efficiency (PCE) and output power are
heavily investigated driven by more energy-efficient commercial applications. In this paper …

We report on the development of a 940-nm diode laser bar based on epitaxially stacked
active regions by employing a tunnel junction structure. The tunnel junction and the device …

Spatial-hole-burning as a limit to the continuous-wave (CW) output power of GaAs-based
diode lasers is experimentally studied. For 90 lm stripe lasers with 6 mm resonator length …

Broad area lasers operating at high power with improved beam quality are needed in many
applications. In typical high-power diode lasers with asymmetric facet coating, it is observed …

GaAs based high power broad area lasers are the most efficient source of optical energy
and are used in many industrial applications. Despite considerable improvement in power …

Current progress in the scaling of continuous wave optical output power and conversion
efficiency of broad-area GaAs-based edge emitters, broad-area lasers (BALs), operating in …

The output power of modern 975nm GaAs-based broad area diode lasers is limited by
increasing carrier and photon losses at high bias. We use experiment and one-dimensional …

9xx nm laser diodes (LDs) with aluminum component continuous gradient photonic band
crystal (CCG-PBC) waveguide structure are designed and fabricated. The simulation results …