The fabrication of next-generation semiconductor devices has created a need for low- temperature (≤ 400 C) deposition of highly-conformal (> 95%) SiO 2, SiN x, and SiC films …
AJ Niskanen - US Patent 11,286,562, 2022 - Google Patents
A gas-phase chemical reactor, a system including the reac tor, and methods of using the reactor and system are dis closed. An exemplary reactor includes a reaction chamber and is …
AE Kaloyeros, FA Jové, J Goff… - ECS Journal of Solid State …, 2017 - iopscience.iop.org
This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride-rich films, ie, silicon nitride with C inclusion …
Neuromorphic computation based on resistive switching devices represents a relevant hardware alternative for artificial deep neural networks. For the highest accuracies on …
V Pore, Z Liu - US Patent 11,227,789, 2022 - Google Patents
There is provided a method of filling one or more recesses by providing the substrate in a reaction chamber and intro ducing a first reactant to the substrate with a first dose …
New deposition techniques for amorphous oxide semiconductors compatible with silicon back end of line manufacturing are needed for 3D monolithic integration of thin‐film …
H Cho, N Lee, H Choi, H Park, C Jung, S Song, H Yuk… - Applied Sciences, 2019 - mdpi.com
Silicon nitride (SiNx) thin films using 1, 3-di-isopropylamino-2, 4-dimethylcyclosilazane (CSN-2) and N2 plasma were investigated. The growth rate of SiNx thin films was saturated …
HP Ma, HL Lu, JH Yang, XX Li, T Wang, W Huang… - Nanomaterials, 2018 - mdpi.com
In this study, silicon nitride (SiNx) thin films with different oxygen concentration (ie, SiON film) were precisely deposited by plasma enhanced atomic layer deposition on Si (100) …