With the continued miniaturization of devices in the semiconductor industry, atomic layer
deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the …

The fabrication of next-generation semiconductor devices has created a need for low-
temperature (≤ 400 C) deposition of highly-conformal (> 95%) SiO 2, SiN x, and SiC films …

A gas-phase chemical reactor, a system including the reac tor, and methods of using the
reactor and system are dis closed. An exemplary reactor includes a reaction chamber and is …

This article provides an overview of the state-of-the-art chemistry and processing
technologies for silicon nitride and silicon nitride-rich films, ie, silicon nitride with C inclusion …

Neuromorphic computation based on resistive switching devices represents a relevant
hardware alternative for artificial deep neural networks. For the highest accuracies on …

Silicon nitride (SiNx) and hydrogenated silicon nitride (SiNx: H) thin films enjoy widespread
scientific interest across multiple application fields. Exceptional combination of optical …

There is provided a method of filling one or more recesses by providing the substrate in a
reaction chamber and intro ducing a first reactant to the substrate with a first dose …

New deposition techniques for amorphous oxide semiconductors compatible with silicon
back end of line manufacturing are needed for 3D monolithic integration of thin‐film …

Silicon nitride (SiNx) thin films using 1, 3-di-isopropylamino-2, 4-dimethylcyclosilazane
(CSN-2) and N2 plasma were investigated. The growth rate of SiNx thin films was saturated …

In this study, silicon nitride (SiNx) thin films with different oxygen concentration (ie, SiON film)
were precisely deposited by plasma enhanced atomic layer deposition on Si (100) …