Y Torun, H Doğan - Superlattices and Microstructures, 2021 - Elsevier
In this study, 4 common machine learning methods have been used to model the I–V characteristic of the Au/Ni/n-GaN/undoped GaN Schottky diode. The current values of …
Abstract In this study, Artificial Neural Network (ANN) model has been proposed to characterize the annealed and the non-annealed Schottky diode from experimental data …
In this paper, we investigated three different sizes (1.6× 1.6, 1.6× 0.4 and 0.4× 0.4 mm 2) of Ti Schottky diodes on n-type 6H–SiC epitaxial layers using current-voltage-temperature I–VT …
This research aims to study the impact of some physical and structural parameters on the I– V characteristics of a high electron mobility transistors (HEMTs) based on Al x Ga 1-x N/GaN …
Abstract The Au/GaN/GaAs Schottky diode is a fundamental electronic component with versatile applications. In this study we delve into the parameter estimation of Au/GaN/GaAs …