Performance prediction of current-voltage characteristics of Schottky diodes at low temperatures using artificial intelligence
T Güzel, AB Çolak - Microelectronics Reliability, 2023 - Elsevier
Schottky diodes are still one of the most important elements of electronics. Therefore,
investigating the properties of diodes is very important in determining their usage areas. In …
investigating the properties of diodes is very important in determining their usage areas. In …
Modeling of Schottky diode characteristic by machine learning techniques based on experimental data with wide temperature range
Y Torun, H Doğan - Superlattices and Microstructures, 2021 - Elsevier
In this study, 4 common machine learning methods have been used to model the I–V
characteristic of the Au/Ni/n-GaN/undoped GaN Schottky diode. The current values of …
characteristic of the Au/Ni/n-GaN/undoped GaN Schottky diode. The current values of …
Neural network estimations of annealed and non-annealed Schottky diode characteristics at wide temperatures range
Abstract In this study, Artificial Neural Network (ANN) model has been proposed to
characterize the annealed and the non-annealed Schottky diode from experimental data …
characterize the annealed and the non-annealed Schottky diode from experimental data …
Effect of the contact area on the electrical characteristics of the Ti/6H–SiC (n) Schottky diode
A Bekaddour, A Rabehi, S Tizi, B Zebentout… - Micro and …, 2023 - Elsevier
In this paper, we investigated three different sizes (1.6× 1.6, 1.6× 0.4 and 0.4× 0.4 mm 2) of
Ti Schottky diodes on n-type 6H–SiC epitaxial layers using current-voltage-temperature I–VT …
Ti Schottky diodes on n-type 6H–SiC epitaxial layers using current-voltage-temperature I–VT …
Improved electrical characteristics of AlxGa1− xN/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters
This research aims to study the impact of some physical and structural parameters on the I–
V characteristics of a high electron mobility transistors (HEMTs) based on Al x Ga 1-x N/GaN …
V characteristics of a high electron mobility transistors (HEMTs) based on Al x Ga 1-x N/GaN …
Accurate parameter estimation of Au/GaN/GaAs schottky diode model using grey wolf optimization
Abstract The Au/GaN/GaAs Schottky diode is a fundamental electronic component with
versatile applications. In this study we delve into the parameter estimation of Au/GaN/GaAs …
versatile applications. In this study we delve into the parameter estimation of Au/GaN/GaAs …