M Kauk-Kuusik, K Timmo, K Muska… - Journal of Physics …, 2022 - iopscience.iop.org
The power conversion efficiency of Cu 2 ZnSnS 4 (CZTS) solar cells is still limited by deep defects, low minority carrier lifetime and high recombination rates at the CZTS/CdS interface …
The main aim of this work is to determine and explain the relationships between optoelectronic properties and the sulfur anion content in Cu 2 ZnSn (S x Se 1− x) 4 solid …
NJ Carter, WC Yang, CK Miskin, CJ Hages… - Solar energy materials …, 2014 - Elsevier
The solution-based synthesis of quaternary Cu 2 ZnSnS 4 (CZTS) nanocrystals and further processing into a homogeneous photovoltaic absorber film prove challenging due to the …
A Aissat, H Arbouz, JP Vilcot - Solar Energy Materials and Solar Cells, 2018 - Elsevier
This paper reports simulations of gradual bandgap CIGS absorber and its impact on the characteristics of a solar cell. The bandgap of the CIGS absorber varies linearly and drops …
A Abdolhay, A Kashaninia… - IET …, 2023 - Wiley Online Library
The improvement of light trapping inside the active layer of perovskite solar cells (PSCs) was numerically investigated. The light absorption probability was improved by incorporating …
Capacitance spectroscopy has been used to compare charge carrier and defect properties of champion nanocrystal-ink based CZTSSe and CIGSSe solar cells, with efficiencies …
X Sun, CJ Hages, NJ Carter, JE Moore… - 2014 IEEE 40th …, 2014 - ieeexplore.ieee.org
Voltage-dependent admittance spectroscopy has been applied nanocrystal-ink based CZTSSe and CIGSSe solar cells to understand the origins of admittance signatures …
Kesterite solar cells based off of the Cu 2 ZnSn (S, Se) 4 (CZTSSe) material system are a promising technology for earth-abundant photovoltaic applications. Thin-film absorbers …
H Arbouz, A Aissat, JP Vilcot - 2016 International Renewable …, 2016 - ieeexplore.ieee.org
In this work, a front graded band gap of CIGS absorber is simulated where a spatial variation of the band gap energy decreases from a maximum value E gmax at the limit of the junction …