“Leaky Dielectric” Model for the Suppression of Dynamic in Carbon-Doped AlGaN/GaN HEMTs
MJ Uren, S Karboyan, I Chatterjee… - … on Electron Devices, 2017 - ieeexplore.ieee.org
GaN-on-Si power switching transistors that use carbon-doped epitaxy are highly vulnerable
to dynamic R ON dispersion, leading to reduced switching efficiency. In this paper, we …
to dynamic R ON dispersion, leading to reduced switching efficiency. In this paper, we …
GaN power integration technology and its future prospects
The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …
implementing monolithic power integrated circuits. This article presents a comprehensive …
Trap-assisted degradation mechanisms in E-mode p-GaN power HEMT: A review
P Nautiyal, P Pande, VS Kundu… - Microelectronics …, 2022 - Elsevier
Abstract Transistor-based on Gallium Nitride (GaN) technology, has enabled energy-saving
power electronics to alleviate global energy utilization. Being the initial stages of the …
power electronics to alleviate global energy utilization. Being the initial stages of the …
Reliability of hybrid-drain-embedded gate injection transistor
K Tanaka, T Morita, M Ishida, T Hatsuda… - 2017 IEEE …, 2017 - ieeexplore.ieee.org
Reliability tests on 600V-rated GaN-based normally-off hybrid-drain-embedded Gate
Injection Transistor (HD-GIT) are performed. High-temperature reverse-bias test on HD-GIT …
Injection Transistor (HD-GIT) are performed. High-temperature reverse-bias test on HD-GIT …
600-V p-GaN gate HEMT with buried hole spreading channel demonstrating immunity against buffer trapping effects
J Yang, J Wei, Y Wu, M Nuo, Z Chen… - IEEE Electron …, 2022 - ieeexplore.ieee.org
A 600-V p-GaN gate HEMT with buried hole spreading channel (BHSC) is demonstrated to
suppress the buffer trap related dynamic degradation. The BHSC is located at the interface …
suppress the buffer trap related dynamic degradation. The BHSC is located at the interface …
Conductivity modulation in vertical GaN PiN diode: Evidence and impact
S Han, S Yang, K Sheng - IEEE Electron Device Letters, 2021 - ieeexplore.ieee.org
This work presents the experimental evidence and impact of the conductivity modulation in
the direct-bandgap GaN vertical PiN diode, by using pulse-mode and time-resolved …
the direct-bandgap GaN vertical PiN diode, by using pulse-mode and time-resolved …
Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates
H Chandrasekar, MJ Uren, A Eblabla… - IEEE Electron …, 2018 - ieeexplore.ieee.org
We demonstrate that the highly resistive Si substrate in GaN-on-Si RF HEMTs does not act
as an insulator, but instead behaves as a conductive ground plane for static operation and …
as an insulator, but instead behaves as a conductive ground plane for static operation and …
Asymmetric Bipolar Injection in a Schottky-Metal/ -GaN/AlGaN/GaN Device Under Forward Bias
In this letter, we investigated the electroluminescence (EL) spectra and photovoltage
spectrum of a Schottky-metal/p-GaN/AlGaN/GaN diode with a semitransparent anode …
spectrum of a Schottky-metal/p-GaN/AlGaN/GaN diode with a semitransparent anode …
Suppression of buffer trapping effect in GaN-on-Si active-passivation p-GaN gate HEMT via light/hole pumping
Y Wu, M Nuo, J Yang, W Lin, X Liu… - … on Electron Devices, 2023 - ieeexplore.ieee.org
This work investigates the effect of hole injection/light emission to suppress buffer-related
dynamic degradation in an E-mode GaN-on-Si active-passivation p-GaN gate high electron …
dynamic degradation in an E-mode GaN-on-Si active-passivation p-GaN gate high electron …
Versatile Dynamic On-Resistance Test Bench for GaN Power Transistors with Considerations for Soft and Hard Switching, Time-Resolved Test, Packaged and On …
Y Lao, M Nuo, Q Zheng, J Cui, J Yang… - … Devices and ICs …, 2024 - ieeexplore.ieee.org
In this work, we develop a dynamic R_ON test bench for GaN HEMT based on two half-
bridge pulse generating circuits, enabling versatile selection of soft switching (SSW) and …
bridge pulse generating circuits, enabling versatile selection of soft switching (SSW) and …