Trends in the electronic structure of dilute nitride alloys
EP O'Reilly, A Lindsay, PJ Klar… - Semiconductor …, 2009 - iopscience.iop.org
The band-anticrossing (BAC) model has been widely applied to analyse the electronic
structure of dilute nitride III-VN alloys such as GaN x As 1− x. The BAC model describes the …
structure of dilute nitride III-VN alloys such as GaN x As 1− x. The BAC model describes the …
Unification of the band anticrossing and cluster-state models of dilute nitride semiconductor alloys
A Lindsay, EP O'Reilly - 2004 - cora.ucc.ie
We show that a quantitative description of the conduction band in Ga (In) NAs is obtained by
combining the experimentally motivated band anticrossing model with detailed calculations …
combining the experimentally motivated band anticrossing model with detailed calculations …
Alloy scattering of -type carriers in
S Fahy, A Lindsay, H Ouerdane, EP O'reilly - Physical Review B, 2006 - APS
A tight-binding model of the electronic structure of substitutional nitrogen in GaAs, together
with a variational description of quasilocalized nitrogen-induced electronic states near the …
with a variational description of quasilocalized nitrogen-induced electronic states near the …
Theory of the electronic structure of dilute nitride alloys: beyond the band-anti-crossing model
EP O'Reilly, A Lindsay, S Fahy - Journal of Physics: Condensed …, 2004 - iopscience.iop.org
We use an sp 3 s* tight-binding Hamiltonian to investigate the band-anti-crossing (BAC)
model for dilute GaN x As 1− x alloys. The BAC model describes the strong band-gap …
model for dilute GaN x As 1− x alloys. The BAC model describes the strong band-gap …
Direct measurement and analysis of the conduction band density of states in diluted alloys
L Ivanova, H Eisele, MP Vaughan, P Ebert, A Lenz… - Physical Review B, 2010 - APS
We use scanning tunneling spectroscopy to show directly that the conduction band density
of states (DOS) of GaAs 1− x N x with low nitrogen (N) content x is enhanced about 0.5 eV …
of states (DOS) of GaAs 1− x N x with low nitrogen (N) content x is enhanced about 0.5 eV …
Hydrogen Incorporation in III‐N‐V Semiconductors: From Macroscopic to Nanometer Control of the Materials' Physical Properties
The effects of hydrogen incorporation in dilute nitride semiconductors, specifically GaAs1‐
xNx, are discussed. The remarkable consequences of hydrogen irradiation include tuneable …
xNx, are discussed. The remarkable consequences of hydrogen irradiation include tuneable …
Electron mass in dilute nitrides and its anomalous dependence on hydrostatic pressure
The dependence of the electron mass on hydrostatic pressure P in N-diluted GaAs 1− x N x
(x= 0.10% and 0.21%) is investigated by magnetophotoluminescence. Exceedingly large …
(x= 0.10% and 0.21%) is investigated by magnetophotoluminescence. Exceedingly large …
Hydrogen diffusion in
Hydrogen (or deuterium) incorporation in dilute nitride semiconductors modifies dramatically
the electronic and structural properties of the crystal through the creation of nitrogen …
the electronic and structural properties of the crystal through the creation of nitrogen …
Bound exciton states of isoelectronic centers in GaAs: N grown by an atomically controlled doping technique
T Kita, O Wada - Physical Review B, 2006 - APS
We have studied bound exciton states of isoelectronic centers of nitrogen-doped GaAs by
photoluminescence (PL) spectroscopy. The nitrogen doping has been performed in an …
photoluminescence (PL) spectroscopy. The nitrogen doping has been performed in an …
Breakup of the conduction band structure of dilute alloys
Using a combination of optical, electrical, and magnetotunneling measurements on resonant
tunneling diodes incorporating a Ga As 1− y N y quantum well, we demonstrate that the …
tunneling diodes incorporating a Ga As 1− y N y quantum well, we demonstrate that the …