Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
Germanium CMOS potential from material and process perspectives: Be more positive about germanium
A Toriumi, T Nishimura - Japanese Journal of Applied Physics, 2017 - iopscience.iop.org
CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is
expected. This size scaling will end sooner or later, however, because the typical size is …
expected. This size scaling will end sooner or later, however, because the typical size is …
Increased photoluminescence of strain-reduced, high-Sn composition Ge1− xSnx alloys grown by molecular beam epitaxy
We synthesized up to Ge 0.914 Sn 0.086 alloys on (100) GaAs/In y Ga 1− y As buffer layers
using molecular beam epitaxy. The buffer layers enable engineered control of strain in the …
using molecular beam epitaxy. The buffer layers enable engineered control of strain in the …
Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to
grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully …
grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully …
Growth of silicon based germanium tin alloys
E Kasper, J Werner, M Oehme, S Escoubas, N Burle… - Thin Solid Films, 2012 - Elsevier
Germanium tin (GeSn) is under equilibrium a two phase (Ge+ Sn) system. Single phase
GeSn alloys are important for silicon based heterostructure devices as stressors for Ge …
GeSn alloys are important for silicon based heterostructure devices as stressors for Ge …
III–V/Ge channel MOS device technologies in nano CMOS era
CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …
promising devices for high-performance and low power advanced LSIs in the future …
Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy
JP Gupta, N Bhargava, S Kim, T Adam… - Applied physics …, 2013 - pubs.aip.org
Infrared electroluminescence was observed from GeSn/Ge pn heterojunction diodes with
8% Sn, grown by molecular beam epitaxy. The GeSn layers were boron doped …
8% Sn, grown by molecular beam epitaxy. The GeSn layers were boron doped …
Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy
N Bhargava, M Coppinger, J Prakash Gupta… - Applied Physics …, 2013 - pubs.aip.org
Single crystal epitaxial Ge 1− x Sn x alloys with atomic fractions of tin up to x= 0.145 were
grown by solid source molecular beam epitaxy on Ge (001) substrates. The Ge 1− x Sn x …
grown by solid source molecular beam epitaxy on Ge (001) substrates. The Ge 1− x Sn x …
Low-temperature Ge and GeSn chemical vapor deposition using Ge2H6
In this work, digermane (Ge2H6) is investigated as low temperature Ge precursor for
Chemical Vapor Deposition. High quality Ge epitaxial growth on Si substrates is reported at …
Chemical Vapor Deposition. High quality Ge epitaxial growth on Si substrates is reported at …
Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing
We report on the characterization of high Sn-content (∼ 10% Sn) GeSn films grown on (001)
Ge/Si substrates using reduced-pressure chemical vapor deposition. Pseudomorphic 30nm …
Ge/Si substrates using reduced-pressure chemical vapor deposition. Pseudomorphic 30nm …