In this review we summarize the current theoretical and experimental understanding of
clustering phenomena on surfaces, with an emphasis on dynamical properties. The basic …

We show that the islands formed in Stranski-Krastanow (SK) growth of Ge on Si (100) are
initially dislocation free. Island formation in true SK growth should be driven by strain …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

We observe several weak features between 420 and 470 cm− 1 in addition to the normally
observed Si-Si (∼ 500 cm− 1), Si-Ge (∼ 400 cm− 1), and Ge-Ge (∼ 300 cm− 1) optic …

The study and characterization of Ge-Si structures began shortly after the discovery and
initial development of the transistor, motivated in part by fundamental curiosity and in part by …

In the first comprehensive treatment of these technologically important materials, the authors
provide theories linking the properties of semiconductor alloys to their constituent …

Epitaxial growth of heterolayers has in the past relied on optimization of growth conditions to
overcome thermodynamic obstacles. When there is an intrinsic tendency of a heterolayer to …

Using electroreflectance spectroscopy, we have observed new optical transitions near 0.76,
1.25, and 2.31 eV in an ordered strained-layer Ge-Si superlattice. The possible origins of …

In this theoretical study, the quasichemical approximation for an A 1− x B x alloy is
formulated for an arbitrary lattice and choice of cluster. The statistical problem of the average …

The morphology and surface structure of Ge− Si (111) films during the initial stages of
heteroepitaxial growth are studied with high-resolution RBS, RHEED, SEM and TEM. It is …