Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …

The paper presents results for zinc oxide films grown at low-temperature regime by atomic
layer deposition (ALD). We discuss electrical properties of such films and show that low …

In this paper, cheap and efficient photovoltaic cells based on ZnO/Si heterostructure are
discussed. These cells contain zinc oxide nanorods (ZnO NR) grown by a low temperature …

In this work ZnO nanoparticles were synthesized by coprecipitation method. We investigated
the reactivity of 0.24 μm and 50 nm ZnO sample as bulk and nano-sized, respectively …

Multi-layer heterostructure oxide semiconductors employing a layer-by-layer deposition of
alternating indium oxide and zinc oxide thin films generated via atomic layer deposition …

We report on the room temperature thermal conductivity of atomic layer deposition-grown
amorphous TiO 2 and Al 2 O 3 thin films as a function of film thickness and atomic density …

The influence of the composition within multilayered heterostructure oxide semiconductors
has a critical impact on the performance of thin-film transistor (TFT) devices. The …

Indium-free, fully transparent thin-film transistors are fabricated entirely by the atomic layer
deposition technique on rigid and flexible substrates at a low temperature of 160 C. The …

Thin films of high-k oxides are presently used in semiconductor industry as gate dielectrics.
In this work, we present the comparison of structural, morphological and electrical properties …

Dielectric films, such as hafnium dioxide (HfO 2), aluminum oxide (Al 2 O 3), zirconium
dioxide (ZrO 2), titanium dioxide (TiO 2) and their composite layers are deposited on …