In this paper, we theoretically investigate the effect of geometry of QWs and QBs on the
optical performance of AlGaN based UV-C LEDs. It is observed that the graded Al …

We report a numerical analysis of the variation of Aluminium (Al) composition in Al Gallium
Nitride (AlGaN)-based Deep-Ultraviolet Light-Emitting Diode (DUV-LED) and its effects on …

The size and density of nanopits, generated at the surface of their top layer, strongly affect
the electrical and optical properties of AlGaN-based structures. Therefore, the control of the …

Ultraviolet light-emitting diodes (LEDs) based on Aluminum Gallium Nitride (AlGaN) suffer
from poor carriers' confinement effect, one possible solution to this problem is to increase the …

The aluminum gallium nitride (AlGaN)-based deep-ultraviolet light-emitting diode (DUV-
LED) has been a prominent device due to its contribution in various fields. The electron …

In this paper, a structure design using quaternary AlInGaN as multiple-symmetrical-stair-
shaped quantum barriers without an electron blocking layer is shown. The results show this …

为了提高AlGaN 基深紫外发光二极管(light emitting diode, LED) 的内量子效率(internal
quantum efficiency, IQE), 本文采用了基于InAlGaN/AlGaN 超晶格的电子阻挡层(electron …

An InAlN/GaN heterostructure has been successfully grown on GaN/sapphire and
AlN/sapphire substrate by metal organic chemical vapor deposition. The whole epitaxial …

The deep-ultraviolet light-emitting diode (DUV-LED) has been applied in various fields such
as the medical sector, plant lighting, UV curing, sensing, and sterilization. Alas, the issue of …

Abstract Effects of the nanopits diameter observed at the surface of AlGaN on carrier
dynamics are systematically investigated. The diameter variation of nanopits is achieved …