This article reviews the history and current progress in high-mobility strained Si, SiGe, and
Ge channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We start by …

This paper explores stress management in SiGe with two kinds of structures, namely,
epitaxial SiGe films on small pillars and fins. In addition to the compliant substrate effect in …

Fully-depleted strained Si n-channel MOSFETs were demonstrated on a compliant
borophosphorosilicate insulator (BPSG) without an underlying SiGe buffer layer. Stress …

We review theoretical concepts and experimental results on the physics of misfit dislocations
in nanocomposite solids with quantum dots (QDs) and nanowires (quantum wires). Special …

We have investigated elastic strain relaxation, ie, strain relaxation without the introduction of
dislocations or other defects, in free-standing SiGe/Si structures. We fabricated free-standing …

We describe the compliant behavior of Ge 1− y Sn y buffer layers grown strain-free on Si
(100). Deposition of lattice-mismatched epilayers on these buffers introduces significant …

A cap layer was used to suppress buckling during the relaxation of compressively strained
30 nm Si 0.7 Ge 0.3 islands on borophosphorosilicate glass. The lateral expansion and …

This paper reports two areas of focus for layout variation effects in advanced strained-Si
technology: 1) shallow-trench isolation (STI)-induced embedded SiGe (eSiGe) strain …

Semiconductor epitaxial alloys are widely used in solid state such as lasers, light-emitting
diodes and photovoltaics.[1–3] Currently, the versatility of the semiconductor epitaxial …

A semiconductor fabrication process includes patterning a hard mask over a semiconductor
substrate to expose an isolation region and forming a trench in the isolation region. A …