Hardware and information security primitives based on 2D materials and devices

A Wali, S Das - Advanced Materials, 2023 - Wiley Online Library
Hardware security is a major concern for the entire semiconductor ecosystem that accounts
for billions of dollars in annual losses. Similarly, information security is a critical need for the …

Advancement in soft iontronic resistive memory devices and their application for neuromorphic computing

MU Khan, J Kim, MY Chougale… - Advanced Intelligent …, 2023 - Wiley Online Library
The aqueous electrolyte can be a deformable and stretchable liquid material for iontronic
resistive memory devices. An aqueous medium makes a device closer to the brain‐like …

[HTML][HTML] A cost-driven method for deep-learning-based hardware trojan detection

C Dong, Y Yao, Y Xu, X Liu, Y Wang, H Zhang, L Xu - Sensors, 2023 - mdpi.com
The Cyber-Physical System and even the Metaverse will become the second space in which
human beings live. While bringing convenience to human beings, it also brings many …

Large scale integrated IGZO crossbar memristor array based artificial neural architecture for scalable in-memory computing

M Naqi, T Kim, Y Cho, P Pujar, J Park, S Kim - Materials Today Nano, 2024 - Elsevier
Neuromorphic systems based on memristor arrays have not only addressed the von
Neumann bottleneck issue but have also enabled the development of computing …

Application of 2D Materials in Hardware Security for Internet‐of‐Things: Progress and Perspective

H Xiang, YC Chien, Y Shi, KW Ang - Small Structures, 2022 - Wiley Online Library
Internet‐of‐Things (IoT) is a ubiquitous network that features a tremendous amount of data
and myriads of heterogeneous devices, which are interconnected and accessible or …

Volatile threshold switching memristor: An emerging enabler in the AIoT era

W Zuo, Q Zhu, Y Fu, Y Zhang, T Wan, Y Li… - Journal of …, 2023 - iopscience.iop.org
With rapid advancement and deep integration of artificial intelligence and the internet-of-
things, artificial intelligence of things has emerged as a promising technology changing …

Amorphous indium–gallium–zinc–oxide memristor arrays for parallel true random number generators

H Mao, Y Zhu, Y Zhu, B Peng, C Chen, L Zhu… - Applied Physics …, 2023 - pubs.aip.org
True random number generators (TRNGs) can generate unpredictable binary bitstream by
exploiting the intrinsic stochasticity in physical variables. In a threshold switching memristor …

Forming‐Free Resistive Switching of Electrochemical Titanium Oxide Localized Nanostructures: Anodization, Chemical Composition, Nanoscale Size Effects, and …

R Tominov, V Avilov, Z Vakulov… - Advanced Electronic …, 2022 - Wiley Online Library
Electrochemical anodization is a powerful method for the preparation of oxide thin films with
controlled thickness, structure, and composition and proves as a promising approach to be …

Ultra-low power consumption and favorable reliability mn-doped BiFeO3 resistance-switching devices via tunable oxygen vacancy

Y Zhao, R Su, L Cheng, M Cheng, W Cheng… - Ceramics …, 2023 - Elsevier
Due to the instability of Fe valence and the existence of a large number of oxygen vacancies
in BFO films, a large leakage current, and comparatively low resistance value usually …

Thickness-dependent resistive switching memory characteristics of NiO nanodisks fabricated by AAO nanotemplate

Y Ahn, JY Son - Current Applied Physics, 2023 - Elsevier
Forming and set/reset operating voltages are critical issues encountered with a decrease in
resistive random-access memory (RRAM) sizes. This study investigated the thickness …