Reduced auger coefficient through efficient carrier capture and improved radiative efficiency from the broadband optical cavity: a mechanism for potential droop …
Efficiency droop at high carrier-injection regimes is a matter of concern in InGaN/GaN
quantum-confined heterostructure-based light-emitting diodes (LEDs). Processes such as …
quantum-confined heterostructure-based light-emitting diodes (LEDs). Processes such as …
Preparation of controllable double-selective etched porous substrate for HVPE growth of GaN crystals with excellent optical properties
B Zhang, H Hu, X Yao, Y Wu, Y Shao, X Hao - CrystEngComm, 2023 - pubs.rsc.org
Heteroepitaxial growth of GaN will inevitably generate a large number of defects; serious
residual stress will be caused by the mismatch of the lattice and thermal expansion …
residual stress will be caused by the mismatch of the lattice and thermal expansion …
Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐Based Nanostructures Using Femtosecond Pump–Probe Absorption Spectroscopy
GaN‐based optoelectronic devices including light‐emitting diodes and lasers realized with
quantum‐confined nanostructures, revolutionized the solid‐state lighting. Excited‐state …
quantum‐confined nanostructures, revolutionized the solid‐state lighting. Excited‐state …
Double-side step-graded AlGaN electron blocking layer for nearly droop-free GaN-based blue LEDs
Double-side step-graded AlGaN electron blocking layer (EBL) for InGaN/GaN based LEDs
with emission wavelength at 415 nm is proposed to develop nearly droop-free performance …
with emission wavelength at 415 nm is proposed to develop nearly droop-free performance …
Femto-second carrier and photon dynamics in site controlled hexagonal InGaN/GaN isolated quantum dots: Natural radial potential well and its dynamic modulation
Quantum dot (QD) is slated to play a significant role in quantum technologies through its
usage as a single-photon source. It also has promising applications as efficient light emitters …
usage as a single-photon source. It also has promising applications as efficient light emitters …
Real-time observation of delayed excited-state dynamics in InGaN/GaN quantum-wells by femtosecond transient absorption spectroscopy
This work employs femtosecond transient absorption spectroscopy to investigate the
ultrafast carrier dynamics of bound states in In 0.14 Ga 0.86 N/GaN quantum wells. The …
ultrafast carrier dynamics of bound states in In 0.14 Ga 0.86 N/GaN quantum wells. The …
Improvement in Radiative Recombination Efficiency and Emission Power Density of Surface-Passivated InGaN Nano-disk in a Wire Heterostructure Array
GaN based materials are widely used for making light sources over a broad emission
wavelength. The emission energy can also be tuned by choosing the degree of quantum …
wavelength. The emission energy can also be tuned by choosing the degree of quantum …