Indium gallium nitride channel high electron mobility transistors, and method of making the same
JM Redwing, EL Piner - US Patent 6,727,531, 2004 - Google Patents
A gallium nitride-based HEMT device, comprising a channel layer formed of an InGaN alloy.
Such device may comprise an AlGaN/InGaN heterostructure, eg, in a structure including a …
Such device may comprise an AlGaN/InGaN heterostructure, eg, in a structure including a …
Field effect transistor
T Sonoda, S Sakamoto, N Kasai - US Patent 5,250,822, 1993 - Google Patents
57 ABSTRACT A field effect transistor includes a GaAs substrate on which an undoped
GaAs layer is disposed. A doped electron supply layer is disposed on the undoped GaAs …
GaAs layer is disposed. A doped electron supply layer is disposed on the undoped GaAs …
Indium gallium nitride channel high electron mobility transistors, and method of making the same
JM Redwing, EL Piner - US Patent App. 11/211,122, 2013 - Google Patents
1. Field of the Invention This invention relates to high electron mobility transistor (HEMT)
devices and method of making the same. 2. Description of the Related Art GaN based …
devices and method of making the same. 2. Description of the Related Art GaN based …
Method of producing metal semiconductor field effect transistor
T Kitano - US Patent 5,585,289, 1996 - Google Patents
(57) ABSTRACT A field effect transistor includes a semi-insulating GaAs substrate; source,
gate, and drain electrodes disposed on a surface of the GaAs substrate; a low carrier …
gate, and drain electrodes disposed on a surface of the GaAs substrate; a low carrier …
Field effect transistor
T Kitano - US Patent 5,486,710, 1996 - Google Patents
A field effect transistor includes a semi-insulating GaAs substrate; source, gate, and drain
electrodes disposed on a surface of the GaAs substrate; a low carrier concentration active …
electrodes disposed on a surface of the GaAs substrate; a low carrier concentration active …
Heterojunction field-effect transistor
M Inai, H Sasaki - US Patent App. 10/277,656, 2003 - Google Patents
US20030080348A1 - Heterojunction field-effect transistor - Google Patents
US20030080348A1 - Heterojunction field-effect transistor - Google Patents Heterojunction …
US20030080348A1 - Heterojunction field-effect transistor - Google Patents Heterojunction …
High electron mobility transistor
S Hiramatsu - US Patent 5,406,099, 1995 - Google Patents
A compound semiconductor device including a substrate; a first epitaxial layer formed on the
substrate, the first epitaxial layer having an impurity concentration of 1× 10 15≦ p≦ 1× 10 …
substrate, the first epitaxial layer having an impurity concentration of 1× 10 15≦ p≦ 1× 10 …
Field effect transistor and method of manufacturing the same
J Morikawa - US Patent 6,399,430, 2002 - Google Patents
Dittmar (57) ABSTRACT A field effect transistor has a preselected build up resistance with
respect to an IV characteristic of the transistor. In this event, a first GaAS layer is formed on a …
respect to an IV characteristic of the transistor. In this event, a first GaAS layer is formed on a …
High yield sub-micron gate FETs
MV Le, LD Nguyen - US Patent 5,539,222, 1996 - Google Patents
57 ABSTRACT 21 Appl. No.: 424,842(57) Yields of FETs such as HEMTs are significantly
improved 22 Filed: Apr. 19, 1995 by establishing an elongate gate contact opening in a pat …
improved 22 Filed: Apr. 19, 1995 by establishing an elongate gate contact opening in a pat …
Field effect transistor and method of manufacturing the same
J Morikawa - US Patent 6,163,041, 2000 - Google Patents
A field effect transistor has a preselected build up resistance with respect to an IV
characteristic of the transistor. In this event, a first GaAs layer is formed on a GaAs substrate …
characteristic of the transistor. In this event, a first GaAs layer is formed on a GaAs substrate …