Enhanced photon detection device with biased deep trench isolation
B Zhang, Z Lin - US Patent 9,160,949, 2015 - Google Patents
(57) ABSTRACT A photon detection device includes a photodiode having a planar junction
disposed in a first region of semiconductor material. A deep trench isolation (DTI) structure is …
disposed in a first region of semiconductor material. A deep trench isolation (DTI) structure is …
Geiger-mode photodiode with integrated and adjustable quenching resistor and surrounding biasing conductor
DN Sanfilippo, MC Mazillo - US Patent 8,766,164, 2014 - Google Patents
An embodiment of a Geiger-mode avalanche photodiode includes a body of semiconductor
material having a first conductivity type, a first Surface and a second Surface; a trench …
material having a first conductivity type, a first Surface and a second Surface; a trench …
Avalanche photodiode operating in geiger mode including a structure for electro-optical confinement for crosstalk reduction, and array of photodiodes
MC Mazzillo - US Patent 9,299,873, 2016 - Google Patents
BACKGROUND In the technical field of photon detection, the so-called avalanche
photodiodes operating in Geiger mode (GMAPs) are known, which enable detection of …
photodiodes operating in Geiger mode (GMAPs) are known, which enable detection of …
Integrated circuit with reflective material in trenches and related methods
L Motta, CAG Savoia - US Patent 9,450,007, 2016 - Google Patents
An IC may include a Substrate and a layer, and an array of GMAPDs in the layer. The layer
may have trenches extend ing between adjacent GMAPDs. The IC may include an optically …
may have trenches extend ing between adjacent GMAPDs. The IC may include an optically …
Integrated circuit with reflective material in trenches and related methods
L Motta, CAG Savoia - US Patent 9,773,930, 2017 - Google Patents
An IC may include a substrate and a layer, and an array of GMAPDs in the layer. The layer
may have trenches extend ing between adjacent GMAPDs. The IC may include an optically …
may have trenches extend ing between adjacent GMAPDs. The IC may include an optically …
Avalanche photodiode operating in geiger mode including a structure for electro-optical confinement for crosstalk reduction, and array of photodiodes
MC MAZZILLO - US Patent 9,899,557, 2018 - Google Patents
An avalanche photodiode includes a cathode region and an anode region. A lateral
insulating region including a barrier region and an insulating region surrounds the anode …
insulating region including a barrier region and an insulating region surrounds the anode …
Diagnostic device with integrated photodetector, and diagnostic system including the same
L Renna, CC Galati, NMR Spinella… - US Patent 9,658,158, 2017 - Google Patents
A diagnostic device includes a photodiode formed by a body of semiconductor material
having a first surface, an integrated optical structure on the first surface and having a second …
having a first surface, an integrated optical structure on the first surface and having a second …
Method of detecting impinging position of photons on a geiger-mode avalanche photodiode, related geiger-mode avalanche photodiode and fabrication process
DN Sanfilippo, G Condorelli - US Patent 8,723,100, 2014 - Google Patents
(57) ABSTRACT A Geiger-mode avalanche photodiode may include an anode, a cathode,
an output pad electrically insulated from the anode and the cathode, a semiconductor layer …
an output pad electrically insulated from the anode and the cathode, a semiconductor layer …
Geiger-mode photodiode with integrated and JFET-effect-adjustable quenching resistor, photodiode array, and corresponding manufacturing method
DN Sanfilippo, MC Mazzillo, PG Fallica - US Patent 8,476,730, 2013 - Google Patents
An embodiment of a Geiger-mode avalanche photodiode, having: a body made of
semiconductor material of a first type of conductivity, provided with a first surface and a …
semiconductor material of a first type of conductivity, provided with a first surface and a …
Array of mutually insulated Geiger-mode avalanche photodiodes, and corresponding manufacturing process
DN Sanfilippo, EA Sciacca, PG Fallica… - US Patent …, 2013 - Google Patents
An embodiment of an array of Geiger-mode avalanche pho todiodes, wherein each
photodiode is formed by a body of semiconductor material, having a first conductivity type …
photodiode is formed by a body of semiconductor material, having a first conductivity type …