Low dielectric constant materials

W Volksen, RD Miller, G Dubois - Chemical reviews, 2010 - ACS Publications
Modern computer microprocessor chips are marvels of engineering complexity. For the
current 45 nm technology node, there may be nearly a billion transistors on a chip barely 1 …

Low dielectric constant materials for microelectronics

K Maex, MR Baklanov, D Shamiryan, F Lacopi… - Journal of Applied …, 2003 - pubs.aip.org
The ever increasing requirements for electrical performance of on-chip wiring has driven
three major technological advances in recent years. First, copper has replaced Aluminum as …

Challenges in the implementation of low-k dielectrics in the back-end of line

R Hoofman, G Verheijden, J Michelon, F Iacopi… - Microelectronic …, 2005 - Elsevier
The introduction of ultra low-k materials in copper technology has been much slower than
anticipated in the ITRS Roadmap. The introduction of porosity in low-k materials has …

Short-ranged structural rearrangement and enhancement of mechanical properties of organosilicate glasses induced by ultraviolet radiation

F Iacopi, Y Travaly, B Eyckens, C Waldfried… - Journal of Applied …, 2006 - pubs.aip.org
The short-ranged bonding structure of organosilicate glasses can vary to a great extent and
is directly linked to the mechanical properties of the thin film material. The combined action …

Toward successful integration of porous low-k materials: Strategies addressing plasma damage

K Lionti, W Volksen, T Magbitang… - ECS Journal of Solid …, 2014 - iopscience.iop.org
The increasing sensitivity of porous low dielectric constant materials to process damage
constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring …

The role of ultraviolet radiation during ultralow k films curing: Strengthening mechanisms and sacrificial porogen removal

A Zenasni, V Jousseaume, P Holliger… - Journal of Applied …, 2007 - pubs.aip.org
This work proposes a fundamental understanding of structural transformation occurring
during porogen extraction from as-deposited ultralow k (ULK) materials when exposed to …

Removal of plasma-modified low-k layer using dilute HF: Influence of concentration

QT Le, MR Baklanov, E Kesters… - … and Solid-State …, 2005 - iopscience.iop.org
The removal of an oxygen-containing plasma-modified layer on top of porous low dielectric
constant (low-k) materials by treatment with aqueous HF has been investigated. Our study …

Thermomechanical properties of thin organosilicate glass films treated with ultraviolet-assisted cure

F Iacopi, G Beyer, Y Travaly, C Waldfried, DM Gage… - Acta Materialia, 2007 - Elsevier
Ultraviolet (UV)-assisted cure has recently been reported as an efficient method to enhance
the mechanical properties of organosilicate glasses (OSG) at the expense of only minor film …

Compressive stress relaxation through buckling of a low-k polymer-thin cap layer system

F Iacopi, SH Brongersma, K Maex - Applied physics letters, 2003 - pubs.aip.org
The thermomechanical stability of a system composed of a metallic cap layer on top of a low-
k thermosetting polymer film is investigated. It is observed that, when metal layers with high …

Tuning of sculptured-thin-film spectral-hole filters by postdeposition etching

SM Pursel, MW Horn, A Lakhtakia - Optical Engineering, 2007 - spiedigitallibrary.org
Postdeposition chemical etching of spectral-hole filters, which were fabricated as chiral
sculptured thin films with central 90-deg-twist defects, decreases the cross-sectional …