Performance Characteristics of S-Band GaN HEMT-based RF Power Amplifier Implemented on DC Bias Limitation
S Rahayu, A Munir - 2024 International Conference on …, 2024 - ieeexplore.ieee.org
This paper discusses the development of a radio frequency (RF) power amplifier based on a
Gallium Nitride High Electron Mobility Transistor (GaN HEMT) technology and its …
Gallium Nitride High Electron Mobility Transistor (GaN HEMT) technology and its …
Self-Oscillatory DC-DC Converter Circuits for Energy Harvesting in Extreme Environments
MH Weng, DR Brennan, NG Wright, AB Horsfall - 2018 - books.google.com
A novel self-starting converter circuit technology is described for energy harvesting and
powering wireless sensor nodes, constructed from silicon carbide devices and proprietary …
powering wireless sensor nodes, constructed from silicon carbide devices and proprietary …