Optical pressure sensor based on a Mach-Zehnder interferometer integrated with a lateral a-Si: H pin photodiode
C Wagner, J Frankenberger… - IEEE photonics …, 1993 - ieeexplore.ieee.org
We have fabricated an optical pressure sensor consisting of a Mach-Zehnder (MZ)
interferometer and a thin membrane anisotropically etched into the silicon substrate …
interferometer and a thin membrane anisotropically etched into the silicon substrate …
Monolithic integration of optical waveguide circuitry with III-V photodetectors for advanced lightwave receivers
RJ Deri - Journal of lightwave technology, 1993 - ieeexplore.ieee.org
Recent progress in monolithic waveguide-photodetector integration on III-V semiconductors
for applications in the 0.8-1.6-mu m wavelength range is reviewed. Critical issues for device …
for applications in the 0.8-1.6-mu m wavelength range is reviewed. Critical issues for device …
Waveguide integrated 1.55 µm photodetector with 45 GHz bandwidth
A Umbach, D Trommer, GG Mekonnen, W Ebert… - Electronics Letters, 1996 - IET
Evanescently coupled, waveguide integrated photodiodes were fabricated on InP. The
device design is intended to provide ultrafast photoresponse together with a high …
device design is intended to provide ultrafast photoresponse together with a high …
Photodetectors for optical fiber communications
A Bandyopadhyay, MJ Deen - Photodetectors and Fiber Optics, 2001 - books.google.com
The photodetector is an essential component of an optical communication system where an
optical signal is converted into an electrical signal to be subsequently amplified by the …
optical signal is converted into an electrical signal to be subsequently amplified by the …
Monolithic integration of a GaInAs pin photodiode and an optical waveguide: modeling and realization using chloride vapor phase epitaxy
M Erman, P Jarry, R Gamonal… - Journal of lightwave …, 1988 - ieeexplore.ieee.org
A theoretical and experimental study is discussed of a pin GaInAs photodiode integrated
with inverted-rib InP or GaInAsP waveguides grown on InP substrate. The coupling …
with inverted-rib InP or GaInAsP waveguides grown on InP substrate. The coupling …
Monolithic pinHEMT receiver for long wavelength optical communications
H Nobuhara, H Hamaguchi, T Fujii, O Aoki, M Makiuchi… - Electronics Letters, 1988 - IET
An AlInAs/GaInAs high electron mobility transistor (HEMT) has been monolithically
integrated with an InP/GaInAs pin photodiode for the first time. Transconductance of the …
integrated with an InP/GaInAs pin photodiode for the first time. Transconductance of the …
Impedance matching for enhanced waveguide/photodetector integration
RJ Deri, O Wada - Applied physics letters, 1989 - pubs.aip.org
A novel impedance-matched structure is proposed for improved coupling in evanescentiy
coupled, integrated waveguide/photodetectors. We show that insertion of an …
coupled, integrated waveguide/photodetectors. We show that insertion of an …
Integrated waveguide/photodiodes using vertical impedance matching
RJ Deri, N Yasuoka, M Makiuchi, O Wada… - Applied physics …, 1990 - pubs.aip.org
A novel" vertical impedance matching" approach is demonstrated to improve absorption in
evanescently coupled, integrated waveguide/photodiodes by 500% over conventional …
evanescently coupled, integrated waveguide/photodiodes by 500% over conventional …
Optoelectronic/photonic integrated circuits on InP between technological feasibility and commercial success
R Kaiser, H Heidrich - IEICE transactions on electronics, 2002 - search.ieice.org
The economic success of monolithic optoelectronic and photonic ICs (OEICs, PICs) on InP
depends strongly on their cost and performance. Taking into account these requirements as …
depends strongly on their cost and performance. Taking into account these requirements as …
An integrated, crystalline organic waveguide-coupled InGaAs photodetector
RB Taylor, PE Burrows… - IEEE Photonics …, 1997 - ieeexplore.ieee.org
We describe a novel, integrated organic-inorganic waveguide/photodetector with an internal
quantum efficiency of (53/spl plusmn/15%). Low-loss (2.7/spl plusmn/0.3 dB/cm at/spl …
quantum efficiency of (53/spl plusmn/15%). Low-loss (2.7/spl plusmn/0.3 dB/cm at/spl …