Photoelectric detectors are the central part of modern photodetection systems with
numerous commercial and scientific applications. p‐Type semiconductor materials play …

In the past 10years, ZnO as a semiconductor has attracted considerable attention due to its
unique properties, such as high electron mobility, wide and direct band gap and large …

We present a novel technique for reliable electrical injection into single semiconductor
nanowires for light-emitting diodes and lasers. The method makes use of a high-resolution …

Nanosized ZnO-based materials for catalytic and sensing applications are highly proficient
over bulk catalytic analogous due to higher surface and tunable physicochemical properties …

The transparent Zinc Oxide (ZnO) thin films were deposited by multi-step sol-gel method and
the effect of sol concentration on structural, morphological and optical properties were …

Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted
molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor …

The principal goal in the field of ferromagnetic semiconductors for devices is the synthesis,
characterization and utilization of semiconductors that exhibit substantial carrier spin …

p-Zn O∕ n-Si heterojunction is achieved by depositing Al–N codoped p-type ZnO film on n-
Si by low-cost sol-gel technique. The junction shows good diode characteristics with …

Closely packed ZnO nanowire array was fabricated on a n-type Si (100) substrate by a
magnetron cosputtering method. The ZnO nanowire/n-Si heterojunction showed good diode …

ZnO pn homojunction light emitting diodes were fabricated based on p-type Sb-doped Zn
O∕ n-type Ga-doped ZnO thin films. Low resistivity Au∕ Ni O and Au∕ Ti contacts were …