The high-voltage CMOS (HVCMOS) sensors are a novel type of CMOS active pixel sensors
for ionizing particles that can be implemented in CMOS processes with deep n-well option …

Abstract A prototype CMOS Image Sensor optimised for soft X-ray applications has been
designed by the Centre for Electronic Imaging in partnership with Teledyne-e2v. The device …

In this paper, a back-illuminated (BSI) time-of-flight (TOF) sensor using 0.2 µm silicon-on-
insulator (SOI) complementary metal oxide semiconductor (CMOS) technology is developed …

This article presents a 16-μm pitch CMOS image sensor (CIS) exhibiting a high near-infrared
(NIR) sensitivity and a 71.3-dB signal-to-noise ratio (SNR) with a linear response for high …

THESEUS (Transient High Energy Sky & Early Universe Surveyor) is one of the three
candidates for the M5 mission of the European Space Agency. The favoured mission will be …

This article presents a prototype 22.4 μ\textm pixel pitch global shutter (GS) wide dynamic
range (WDR) soft X-ray CMOS image sensor (sxCMOS). Backside-illuminated (BSI) pinned …

A monolithic CMOS image sensor based on the pinned photodiode (PPD) and optimized for
X-ray imaging in the 300 eV to 5 keV energy range is described. Featuring 40 μm square …

Fully Depleted Monolithic Active Pixel Sensors (FD-MAPS) represent an appealing
alternative to hybrid detectors for radiation imaging applications. We have recently …

CIS221-X is a prototype complementary metal-oxide-semiconductor (CMOS) image sensor,
optimized for soft x-ray astronomy and developed for the proposed ESA Transient High …

The radiation hardness of a fully depleted pinned photodiode (PPD) CMOS image sensor
(CIS) has been evaluated with gamma and proton irradiations. The sensors employ an …