Atomic layer deposition (ALD) is a thin-film fabrication technique that has great potential in
nanofabrication. Based on its self-limiting surface reactions, ALD has excellent conformality …

Dynamic random access memories (DRAMs) are currently used as the core memory in
computing systems because of their high speed and density. Their demand should continue …

A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …

The performance of modern chips is strongly related to the multi-layer interconnect structure
that interfaces the semiconductor layer with the outside world. The resulting demand to …

This work reports an analytical method for determining electrical resistivity (ρ) and sheet
resistance (RS) of isotropic conductors. The method is compared with previous numerical …

In situ temperature monitoring of curved high-temperature components in extreme
environments is challenging for a variety of applications in fields such as aero engines and …

The structure and ultrafast photodynamics of∼ 8 nm Au@ Pt core–shell nanocrystals with
ultrathin (< 3 atomic layers) Pt–Au alloy shells are investigated to show that they meet the …

The structural and electrical properties of Mo thin films with thicknesses between 3 and 50
nm, deposited by physical vapor deposition, have been evaluated in order to assess the …

Using memristors, such as oxide and phase change resistive switches, as tunable resistors
to construct analog computing hardware accelerators is gaining keen attention. Such …

Spin-orbit-torque (SOT) symmetry in a heavy-metal–ferromagnet bilayer forbids the
deterministic switching of perpendicular magnetization. Traditionally, an external magnetic …