Comparative results of 980 nm InGaAs/GaAs and 1550 nm AlGaInAs/InP diode lasers
KO Arslan, R Aksakal, B Çakmak - Materials Today: Proceedings, 2021 - Elsevier
Transient and steady-state characteristics of 1550 nm AlGaInAs/InP and 980 nm
InGaAs/GaAs diode lasers were comparatively modelled using rate equations. The …
InGaAs/GaAs diode lasers were comparatively modelled using rate equations. The …
A comparative investigation of 980 nm GaAs and 1550 nm InP-based diode lasers
KO Arslan, R Aksakal, B Cakmak - Laser Physics, 2021 - iopscience.iop.org
Transient and steady-state characteristics of 1550 nm AlGaInAs/InP and 980 nm
InGaAs/GaAs diode lasers were comparatively modeled using rate equations. The variations …
InGaAs/GaAs diode lasers were comparatively modeled using rate equations. The variations …