Here we benchmark device-to-device variation in field-effect transistors (FETs) based on monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition …
Realization of wafer-scale single-crystal films of transition metal dichalcogenides (TMDs) such as WS2 requires epitaxial growth and coalescence of oriented domains to form a …
W Sun, Y Yang, Z Yang, L Wang, J Wang, D Xu… - Journal of Materials …, 2021 - Elsevier
Graphene films (GFs) and graphene-reinforced nanocomposite coatings (GNCs) have received unprecedented attention for corrosion protection because graphene possesses a …
Y Fan, Z Zhang, X Deng, J Yu, H Zhou, F Meng… - Applied Surface …, 2024 - Elsevier
It is extremely hard to achieve atomic surface on fused silica with a high material removal rate (MRR). Furthermore, in traditional chemical mechanical polishing (CMP), toxic and …
In this article, we adopt a radical approach for next generation ultra-low-power sensor design by embracing the evolutionary success of animals with extraordinary sensory …
Two-dimensional (2D) semiconductors possess promise for the development of field-effect transistors (FETs) at the ultimate scaling limit due to their strong gate electrostatics …
Defects play a pivotal role in limiting the performance and reliability of nanoscale devices. Field-effect transistors (FETs) based on atomically thin two-dimensional (2D) …
A true random number generator (TRNG) is essential to ensure information security for Internet of Things (IoT) edge devices. While pseudorandom number generators (PRNGs) …
Monolithic three-dimensional (M3D) integration is being increasingly adopted by the semiconductor industry as an alternative to traditional through-silicon via technology as a …