Abstract Ferromagnetic Co2-Heusler compounds showing high spin polarization have been
utilized as spin injectors and detectors for III–V and Group-IV semiconductors. In this article …

This paper reviews the recent progress in germanium (Ge) spintronics on the basis of the
electrical spin injection from ferromagnets (FM), where Ge is a next generation …

Electrical injection of spin-polarized electrons from ferromagnets into semiconductors has
been generally demonstrated through a tunneling process with insulator barrier layers that …

We demonstrate electrical spin injection and detection in n-type Ge (n-Ge) at room
temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in …

We report a strain effect on spin transport in semiconductors that exhibit Ge-like conduction
bands at room temperature. Using four-terminal nonlocal spin-transport measurements in …

The inverse Heusler alloy Mn 2 CoAl is known as a spin gapless semiconductor (SGS). It is
believed that the positive linear magnetoresistance (PLMR) effect observed at low …

We show electrical properties of a Ge-based top-gate metal-oxide-semiconductor field-
effect transistor (MOSFET) structure with epitaxial ferromagnetic Heusler alloy/Ge Schottky …

In the present work we have performed self-consistent ab-initio calculation using the full-
potential linearized augmented plane-wave method (FP-LAPW), based on the density …

We report on the highest two-terminal magnetoresistance (MR) ratio at room temperature in
semiconductor-based lateral spin-valve devices. From first-principles calculations, we …

We study magnetic and transport properties of an equiatomic quaternary CoFeVSi Heusler
alloy. By using a molecular beam epitaxy technique at 400∘ C, CoFeVSi epitaxial films with …