A theory of the amplification of the polar-optical-phonon population in a quantum well of polar material under an intense laser field is presented by taking into account the …
T Tsuchiya, T Ando - Physical Review B, 1993 - APS
A wave-function modulation induced by insertion of several thin barrier layers inside a quantum well is proposed as a method of enhancement of the electron mobility limited by …
T Tsuchiya, T Ando - Physical Review B, 1993 - APS
Scattering rates of an electron in GaAs/AlAs superlattices are calculated in an envelope- function approximation which reproduces long-wavelength optical phonons almost …
L Zhang, JJ Shi, S Gao - Semiconductor science and technology, 2008 - iopscience.iop.org
The ground-state self-trapped energy and effective mass of the polaron in a freestanding wurtzite GaN nanowire (NW) are studied by employing the perturbation approach. Based on …
The interaction of electrons with GaAs optical phonons is investigated for a single GaAs/AlAs quantum well using the hybrid model of optical phonons, which incorporates bulk-mode …
L Wendler, T Kraft - Physical Review B, 1996 - APS
The collective charge-density excitations, the intra-and intersubband plasmons, and their manifestation in far-infrared transmission spectroscopy are studied for coupled quantum …
R Zheng, M Matsuura - Physical Review B, 1999 - APS
A theory of electron–optical-phonon interactions in quantum wells consisting of mixed crystals is reported. According to whether the well or the barrier is made of mixed crystals …
L Zhang, J Shi - Semiconductor science and technology, 2005 - iopscience.iop.org
Within the framework of the dielectric continuum approximation and Loudon's uniaxial crystal model, the interface optical (IO) phonon modes and the corresponding Fröhlich …
As device dimensions in electronic and optoelectronic devices are reduced, the characteristics and interactions of dimensionally-confined longitudinal-optical (LO) and …