Challenges and opportunities in advanced Ge pMOSFETs
E Simoen, J Mitard, G Hellings, G Eneman… - Materials Science in …, 2012 - Elsevier
This paper aims at reviewing the state-of-the art of Ge pMOSFETs for future high-
performance CMOS devices. Key in the development is the integration of a Ge channel on a …
performance CMOS devices. Key in the development is the integration of a Ge channel on a …
Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization
K Toko, I Nakao, T Sadoh, T Noguchi, M Miyao - Solid-State Electronics, 2009 - Elsevier
The carrier concentration and mobility of intrinsic holes in poly-Ge films grown by solid-
phase crystallization (SPC) were investigated. The two-step SPC method, consisting of low …
phase crystallization (SPC) were investigated. The two-step SPC method, consisting of low …
Towards monolithic integration of germanium light sources on silicon chips
S Saito, AZ Al-Attili, K Oda… - … Science and Technology, 2016 - iopscience.iop.org
Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge
cannot emit light efficiently. However, the direct band gap energy is close to the indirect one …
cannot emit light efficiently. However, the direct band gap energy is close to the indirect one …
Impacts of oxygen passivation on poly-crystalline germanium thin film transistor
We investigated the effects of the annealing ambient during solid phase crystallization (SPC)
on the crystallization temperature of amorphous Ge and the electrical properties of a back …
on the crystallization temperature of amorphous Ge and the electrical properties of a back …
Kinetics and energetics of Ge condensation in SiGe oxidation
The fabrication of an ultrathin Ge-rich SiGe body on silicon on insulator (SOI) is highly
challenging for the next generation of fully depleted complementary metal-oxide …
challenging for the next generation of fully depleted complementary metal-oxide …
[图书][B] Extended defects in germanium: Fundamental and technological aspects
C Claeys, E Simoen - 2009 - Springer
The first observations of plastically deformed germanium made immediately clear that
dislocations introduced during a high-temperature deformation create acceptor states [1–5] …
dislocations introduced during a high-temperature deformation create acceptor states [1–5] …
In depth characterization of electron transport in 14 nm FD-SOI CMOS devices
M Shin, M Shi, M Mouis, A Cros, E Josse, GT Kim… - Solid-State …, 2015 - Elsevier
In this paper, carrier transport properties in highly scaled (down to 14 nm-node) FDSOI
CMOS devices are presented from 77 K to 300 K. At first, we analyzed electron transport …
CMOS devices are presented from 77 K to 300 K. At first, we analyzed electron transport …
Low temperature characterization of mobility in 14 nm FD-SOI CMOS devices under interface coupling conditions
M Shin, M Shi, M Mouis, A Cros, E Josse, GT Kim… - Solid-State …, 2015 - Elsevier
In this work, we demonstrate the powerful methodology of electronic transport
characterization in highly scaled (down to 14 nm-node) FDSOI CMOS devices using …
characterization in highly scaled (down to 14 nm-node) FDSOI CMOS devices using …
Low temperature germanium to silicon direct wafer bonding using free radical exposure
A low temperature germanium (Ge) to silicon (Si) wafer bonding method was demonstrated
by in situ radical activation bonding in vacuum. In order to gain further insight into the …
by in situ radical activation bonding in vacuum. In order to gain further insight into the …
Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature
G Lin, D Liang, J Wang, C Yu, C Li, S Chen… - Materials Science in …, 2019 - Elsevier
Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation
technique was studied. As enrichment of Ge content, the condensation temperature was …
technique was studied. As enrichment of Ge content, the condensation temperature was …