Electrical programmable multilevel nonvolatile photonic random-access memory
Abstract Photonic Random-Access Memories (P-RAM) are an essential component for the
on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion …
on-chip non-von Neumann photonic computing by eliminating optoelectronic conversion …
A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer
S Qu, L Gao, J Wang, H Chen, J Zhang - Micromachines, 2024 - mdpi.com
The global demand for radio frequency (RF) modules and components has grown
exponentially in recent decades. RF switches are the essential unit in RF front-end and …
exponentially in recent decades. RF switches are the essential unit in RF front-end and …
[PDF][PDF] Electrical programmable low-loss high cyclable nonvolatile photonic random-access memory
The retention-of-state functionality provided by memories is fundamental to any Turing
machine and neural network, hence is critical for any information system today. While …
machine and neural network, hence is critical for any information system today. While …
Investigation of the impact of high temperatures on the switching kinetics of redox‐based resistive switching cells using a high‐speed nanoheater
M von Witzleben, K Fleck, C Funck… - Advanced Electronic …, 2017 - Wiley Online Library
Ionic transport greatly influences the switching kinetics of filamentary resistive switching
memories and depends strongly on temperature and electric fields. To separate the impact …
memories and depends strongly on temperature and electric fields. To separate the impact …
A 25 THz (6.3 fs ) Phase-Change Material RF Switch Fabricated in a High Volume Manufacturing Environment with Demonstrated Cycling > 1 Billion …
N El-Hinnawy, G Slovin, J Rose… - 2020 IEEE/MTT-S …, 2020 - ieeexplore.ieee.org
Two different sized layouts of four-terminal phase-change material (PCM) RF switches
fabricated in a 200 mm silicon high volume manufacturing environment are presented. Both …
fabricated in a 200 mm silicon high volume manufacturing environment are presented. Both …
Experimental investigation of thermal actuation crosstalk in phase-change RF switches using transient thermoreflectance imaging
T Singh, RR Mansour - IEEE Transactions on Electron Devices, 2021 - ieeexplore.ieee.org
This article reports an experimental investigation of transient heat distribution and thermal
actuation crosstalk in phase-change material (PCM) germanium telluride (GeTe)-based …
actuation crosstalk in phase-change material (PCM) germanium telluride (GeTe)-based …
A reconfigurable dual-frequency narrowband CMOS LNA using phase-change RF switches
This paper presents a dual-band low-noise amplifier (LNA) that can be reversibly configured
between 3 and 5 GHz using a phase-change (PC) RF switch. Simultaneous noise and …
between 3 and 5 GHz using a phase-change (PC) RF switch. Simultaneous noise and …
Microheater with copper nanofiber network via electrospinning and electroless deposition
In this report, we present the development of a copper nanofiber network-based
microheater, designed for applications in electron microscopes, gas sensing, and cell …
microheater, designed for applications in electron microscopes, gas sensing, and cell …
[HTML][HTML] Thermal-gradient-driven elemental segregation in Ge2Sb2Te5 phase change memory cells
Thermal gradients have been predicted to play a large role in compositional segregation
leading to failure in phase change memories. We have developed a methodology for …
leading to failure in phase change memories. We have developed a methodology for …
Indirectly heated switch as a platform for nanosecond probing of phase transition properties in chalcogenides
N Wainstein, G Ankonina, T Swoboda… - … on Electron Devices, 2021 - ieeexplore.ieee.org
Although phase-change materials (PCMs) have been studied for more than 50 years,
temperature-dependent characterization of the phase transition dynamics remains …
temperature-dependent characterization of the phase transition dynamics remains …