Infrared photodetectors based on 2D materials and nanophotonics
Abstract 2D materials, such as graphene, transition metal dichalcogenides, black
phosphorus, and tellurium, have been demonstrated to be promising building blocks for the …
phosphorus, and tellurium, have been demonstrated to be promising building blocks for the …
2D metal chalcogenides for IR photodetection
Infrared (IR) photodetectors are finding diverse applications in imaging, information
communication, military, etc. 2D metal chalcogenides (2DMCs) have attracted increasing …
communication, military, etc. 2D metal chalcogenides (2DMCs) have attracted increasing …
Retina‐inspired artificial synapses with ultraviolet to near‐infrared broadband responses for energy‐efficient neuromorphic visual systems
J Zhang, P Guo, Z Guo, L Li, T Sun… - Advanced Functional …, 2023 - Wiley Online Library
Neuromorphic visual system with image perception, memory, and preprocessing functions is
expected to simulate basic features of the human retina. Organic optoelectronic synaptic …
expected to simulate basic features of the human retina. Organic optoelectronic synaptic …
Multilayered PdSe2/Perovskite Schottky Junction for Fast, Self‐Powered, Polarization‐Sensitive, Broadband Photodetectors, and Image Sensor Application
Group‐10 transition metal dichalcogenides (TMDs) with distinct optical and tunable
electrical properties have exhibited great potential for various optoelectronic applications …
electrical properties have exhibited great potential for various optoelectronic applications …
In Situ Fabrication of 2D WS2/Si Type-II Heterojunction for Self-Powered Broadband Photodetector with Response up to Mid-Infrared
The high-performance broadband photodetectors have attracted intensive scientific interests
due to their potential applications in optoelectronic systems. Despite great achievements in …
due to their potential applications in optoelectronic systems. Despite great achievements in …
Two-dimensional multibit optoelectronic memory with broadband spectrum distinction
Optoelectronic memory plays a vital role in modern semiconductor industry. The fast
emerging requirements for device miniaturization and structural flexibility have diverted …
emerging requirements for device miniaturization and structural flexibility have diverted …
Observation of polarity-switchable photoconductivity in III-nitride/MoSx core-shell nanowires
III–V semiconductor nanowires are indispensable building blocks for nanoscale electronic
and optoelectronic devices. However, solely relying on their intrinsic physical and material …
and optoelectronic devices. However, solely relying on their intrinsic physical and material …
Boosting Two-Dimensional MoS2/CsPbBr3 Photodetectors via Enhanced Light Absorbance and Interfacial Carrier Separation
Transition metal dichalcogenides (TMDs) are promising candidates for flexible
optoelectronic devices because of their special structures and excellent properties, but the …
optoelectronic devices because of their special structures and excellent properties, but the …
Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm
The newly discovered Group-10 transition metal dichalcogenides (TMDs) like PtSe2 have
promising applications in high-performance microelectronic and optoelectronic devices due …
promising applications in high-performance microelectronic and optoelectronic devices due …
Integrated structure and device engineering for high performance and scalable quantum dot infrared photodetectors
K Xu, W Zhou, Z Ning - Small, 2020 - Wiley Online Library
Colloidal quantum dots (CQDs) are emerging as promising materials for the next generation
infrared (IR) photodetectors, due to their easy solution processing, low cost manufacturing …
infrared (IR) photodetectors, due to their easy solution processing, low cost manufacturing …