Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …

AlGaInP lattice matched to GaAs is suited for light-emitting diodes (LEDs) operating in the
red, orange, yellow, and yellow–green wavelength range. Such long-wavelength visible …

Laser Processing and Chemistry gives an overview of the fundamentals and applications of
laser-matter interactions, in particular with regard to laser material processing. Special …

Technology/Engineering/Mechanical A bestselling MEMS text... now better than ever. An
engineering design approach to Microelectromechanical Systems, MEMS and Microsystems …

Optical resonators manifest themselves everyday in our world: from the lasers in
supermarket scanners to the colorful patterns reflected from oil slicks. They all share the …

2012-08-15 Assigned to THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
reassignment THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS …

(In, Ga) N light-emitting diodes (LEDs) fabricated on a sapphire growth substrate were
successfully integrated onto Si substrates by a double-transfer technique using excimer …

Indium–gallium nitride (In x Ga 1− x N) single-quantum-well (SQW) light emitting diodes
(LEDs), grown by metalorganic chemical vapor deposition on sapphire, were transferred …

(57) ABSTRACT A method for placing nitride laser diode arrays on a ther mally and
electrically conducting Substrate is described. The method uses an excimer laser to detach …

The high performance GaN light emitting diode (LED) from sapphire wafer has been
transferred on a plastic substrate with 308nm XeCl laser lift-off (LLO) for next generation …