Miniaturization as well as manufacturing processes that electronics devices are subjected to
often results in to increase in operational parameters such as current density, temperature …

With the technological scaling of metal–oxide–semiconductor field-effect transistors
(MOSFETs) and the scarcity of circuit design margins, the characteristics of device reliability …

Electromigration (EM) is a major failure effect for on-chip power grid networks of deep
submicron VLSI circuits. EM degradation of metal grid lines can lead to excessive voltage …

Traditional methods that test for electromigration (EM) failure in multisegment interconnects,
over the lifespan of an IC, are based on the use of the Blech criterion, followed by Black's …

In this article, a novel full-chip EM simulation tool, called EMSpice simulator is proposed.
The new method starts from first principles and simultaneously considers two major …

Electromigration (EM) is considered to be one of the most important reliability issues for
current and future ICs in 10-nm technology and below. In this article, we propose a fast …

Considering temperature gradient or thermomigration (TM) impacts on electromigration (EM)
due to Joule heating was less studied in the past. In this article, we propose a new semi …

The advance of semiconductor technology not only enables integrated circuits with higher
density and better performance but also increases their vulnerability to various aging …

Traditional methodologies for analyzing electromigration (EM) in VLSI circuits first filter
immortal wires using Blech's criterion, and then perform detailed EM analysis on the …

In this paper, we propose a novel finite-element method-based stress analysis for void
growth process after the void is nucleated in the confined copper interconnects. We focus on …