Stationary random‐access memory (SRAM) undergoes an expansion stage, to repel
advanced process variation and support ultra‐low power operation. Memories occupy more …

Power dissipation is considered one of the important issues in low power Very-large-scale
integration (VLSI) circuit design and is related to the threshold voltage. Generally, the sub …

Static random access memory power and speed dissipation are the significant factor in most
of the electronic applications, which prompts numerous plans with the power utilization of …

░ ABSTRACT-FinFETs are widely used as efficient alternatives to the single gate general
transistor in technology scaling because of their narrow channel characteristic. The width …

In ultra-low-power applications, the design of power-efficient static random access memory
(SRAM) is a major concern as it plays a significant part in leakage due to its higher density …

The increasing demand of integration density improvement and battery-powered device
efficiency reduced complementary metal-oxide semiconductor (CMOS) technology node. In …

Zinc Oxide (ZnO) is a versatile wide bandgap material with good thermal conductivity, high
electron mobility, high transparency, low temperature fabrication and a large exciton binding …

Due to the scaling of the CMOS, the limitations of these devices raised the need for
alternative nano-devices. Various devices are proposed like FinFET, TFET, CNTFET. Among …

Since the CMOS technology has reached to nanometer regime to meet the increasing
demand of smarter and faster device, CMOS circuits have to face various short channel …

In an SRAM, threshold voltages of transistors decrease as the CMOS process technology
scales down into the nanometer scale, which causes the leakage currents on the bit‐lines …