Valley manipulation by external fields in two-dimensional materials and their hybrid systems

YP Shao, YQ Li, JD Zheng, YF Tan… - Journal of Physics …, 2024 - iopscience.iop.org
Abstract Investigating two-dimensional (2D) valleytronic materials opens a new chapter in
physics and facilitates the emergence of pioneering technologies. Nevertheless, this …

Manipulating 2D Materials through Strain Engineering

X Yu, Z Peng, L Xu, W Shi, Z Li, X Meng, X He, Z Wang… - Small, 2024 - Wiley Online Library
This review explores the growing interest in 2D layered materials, such as graphene, h‐BN,
transition metal dichalcogenides (TMDs), and black phosphorus (BP), with a specific focus …

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

X Long, X Deng, F Hu, J Xie, B Lv, Y Liao… - Applied Surface Science, 2023 - Elsevier
Abstract Information technology can be improved by using the magnetic proximity effect to
control two-dimensional valleytronics. Ferrovalley materials attract wide attention because of …

Controllable spin splitting in 2D ferroelectric few-layer γ-GeSe

S Shi, KR Hao, XY Ma, QB Yan… - Journal of Physics …, 2023 - iopscience.iop.org
Abstract γ-GeSe is a new type of layered bulk material that was recently successfully
synthesized. By means of density functional theory first-principles calculations, we …

Controllable dual-polarization valley physics in the strain-engineered 2D monolayer of VC 2 N 4

C Lei, S Cao, Z Gong, X Li, Y Ma, J Gao, J Bi… - Journal of Materials …, 2024 - pubs.rsc.org
Valley-related physics has garnered significant attention in fundamental studies and cutting-
edge information technologies. However, such valleytronic materials have rarely been …

Independent Electrical Control of Spin and Valley Degrees in 2D Breathing Kagome Ta3I8 with Intrinsic Triferroicity

S Xing, B Wang, T Zhao, J Zhou… - The Journal of Physical …, 2024 - ACS Publications
Independent electrical control of spin and valley degrees of freedom (DOFs) in 2D materials
is difficult due to the coupling of spin and valley DOFs. Here we propose that spin-filter …

Electric‐Field‐and Stacking‐Tuned Antiferromagnetic FeClF Bilayer: The Coexistence of Bipolar Magnetic Semiconductor and Anomalous Valley Hall Effect

L Zhang, Y Liu, M Wu, G Gao - Advanced Functional Materials, 2024 - Wiley Online Library
Valley polarization from broken inversion symmetry provides a new degree of freedom for
carriers, bipolar magnetic semiconductor (BMS) generates a purely spin‐polarized current …

Large valley splitting and vacancy-induced valley polarization in two-dimensional WSeNH

Z Wang, X Han, Y Liang - Physical Chemistry Chemical Physics, 2024 - pubs.rsc.org
The investigation and manipulation of valley pseudospin in promising two-dimensional (2D)
semiconductors are essential for accelerating the development of valleytronics. Based on …

Enhancement and modulation of valley polarization in Janus CrSSe with internal and external electric fields

R Jiao, Q Wei, L Zhang, Y Xie, J He, Y Zhou… - Physical Chemistry …, 2024 - pubs.rsc.org
The valley polarization, induced by the magnetic proximity effect, in monolayer transition
metal dichalcogenides (TMDCs), has attracted significant attention due to the intriguing …

Dual-Polarization Valley Features in a Sc-Doped FeCl2 Monolayer under Strain

ST Bao, ST Sun, LL Zhang, FM Lang… - The Journal of …, 2024 - ACS Publications
Two-dimensional valley materials have gained extensive interest for their potential
applications in valleytronics, while large spontaneous valley polarization usually occurs in …