Phase change memory cell and manufacturing method
HL Lung, R Liu, SH Chen, YC Chen - US Patent 7,688,619, 2010 - Google Patents
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5,332,923 5,391,901 5,515.488 5,534,712 5,550,396 5,687,112 5,688,713 5,716,883 …
Phase change memory device and manufacturing method
HL Lung, SH Chen - US Patent 7,786,460, 2010 - Google Patents
A phase change memory device comprises a photolithographically formed phase change
memory cell having first and second electrodes and a phase change element positioned …
memory cell having first and second electrodes and a phase change element positioned …
Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
HL Lung, EK Lai, YH Shih, YC Chen… - US Patent 8,907,316, 2014 - Google Patents
(57) ABSTRACT A memory device includes a driver comprising a pn-junction in the form of a
multilayer stack including a first doped semiconductor region having a first conductivity type …
multilayer stack including a first doped semiconductor region having a first conductivity type …
Side wall active pin memory and manufacturing method
HL Lung, SH Chen, YC Chen - US Patent 7,608,503, 2009 - Google Patents
A method of forming a memory cell comprises forming a stack comprising a first electrode,
an insulating layer over the first electrode, and a second electrode over the insulating layer …
an insulating layer over the first electrode, and a second electrode over the insulating layer …
Programmable resistive RAM and manufacturing method
CH Ho, EK Lai, KY Hsieh - US Patent 7,560,337, 2009 - Google Patents
US7560337B2 - Programmable resistive RAM and manufacturing method - Google Patents
US7560337B2 - Programmable resistive RAM and manufacturing method - Google Patents …
US7560337B2 - Programmable resistive RAM and manufacturing method - Google Patents …
Integrated circuit 3D phase change memory array and manufacturing method
HL Lung - US Patent 8,173,987, 2012 - Google Patents
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Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
HL Lung, EK Lai - US Patent 8,089,137, 2012 - Google Patents
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4,452,592 A 6, 1984 Tsai 4,554,045. A* 1 1/1985 Bean et al..................... 117,105 4,599,705 …
Programmable resistive RAM and manufacturing method
CH Ho - US Patent 7,741,636, 2010 - Google Patents
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US7741636B2 - Programmable resistive RAM and manufacturing method - Google Patents …
US7741636B2 - Programmable resistive RAM and manufacturing method - Google Patents …
Phase change memory cell and manufacturing method
HL Lung - US Patent 7,459,717, 2008 - Google Patents
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e161. 5,534,712 A 7/1996 Ovshinsky et al. 6,593,176 B2 7/2003 Dennison 5,550,396 A …
Memory cell with memory material insulation and manufacturing method
HL Lung - US Patent 7,696,506, 2010 - Google Patents
A memory cell, the memory cell includes first and second electrodes and a memory material
element electrically cou pling the first and second electrodes. The memory material element …
element electrically cou pling the first and second electrodes. The memory material element …