A method for identifying process window signature patterns in a device area of a mask is
disclosed. The signature patterns collectively provide a unique response to changes in a set …

The 2007 International Technology Roadmap for Semiconductors (ITRS) 1 specifies
Extreme Ultraviolet (EUV) lithography as one leading technology option for the 32nm half …

5,308,991 A 5/1994 Kaplan 5,528,508 A 6, 1996 Russell et al. 5,573,890 A 11/1996 Spence
5,705.301 A 1/1998 Garza et al. 5,858,580 A 1/1999 Wang et al. 5,862,058 A 1/1999 …

Lithography simulation is an increasingly important part of semiconductor manufacturing
due to the decreasing k1 value. It is not only required in lithography process development …

The use of a single figure of merit to judge resist performance with respect to resolution,
linewidth roughness (LWR), and sensitivity is proposed and evaluated. Chemically amplified …

Since their introduction in the semiconductor industry, chemically amplified resists have
proven to offer very valuable benefits to lithography processes, of which improved resist …

5,573,890 A 11/1996 Spence~~~~~~~~~-- 430/311 as computer-readable program code
embodied in computer 5,705,301 A 1/1998 Garza et a1~ 430/5 readable media. The …

The ITRS roadmap and Moore's law are driving us to print ever smaller features and ever
tighter pitches. For these ultrasmall features and pitches, resist effects are expected to play a …

Organometallic photoresists are being pursued as an alternative photoresist material to
push the current extreme ultraviolet lithography (EUVL) to the next generation of high-NA …

Optical proximity correction (OPC) is one of the most widely used resolution enhancement
techniques (RET) in nanometer designs to improve subwavelength printability. Conventional …