Interference lithography at EUV and soft X-ray wavelengths: Principles, methods, and applications
N Mojarad, J Gobrecht, Y Ekinci - Microelectronic Engineering, 2015 - Elsevier
Interference lithography is an effective method of patterning periodic structures with limits set
by light diffraction. Using this method at the short wavelengths of extreme ultraviolet (EUV) …
by light diffraction. Using this method at the short wavelengths of extreme ultraviolet (EUV) …
Phase-sensitive plasmonic biosensor using a portable and large field-of-view interferometric microarray imager
Nanophotonics, and more specifically plasmonics, provides a rich toolbox for biomolecular
sensing, since the engineered metasurfaces can enhance light–matter interactions to …
sensing, since the engineered metasurfaces can enhance light–matter interactions to …
[HTML][HTML] Beyond EUV lithography: a comparative study of efficient photoresists' performance
N Mojarad, J Gobrecht, Y Ekinci - Scientific reports, 2015 - nature.com
Extreme ultraviolet (EUV) lithography at 13.5 nm is the main candidate for patterning
integrated circuits and reaching sub-10-nm resolution within the next decade. Should …
integrated circuits and reaching sub-10-nm resolution within the next decade. Should …
Fluorine-rich zinc oxoclusters as extreme ultraviolet photoresists: chemical reactions and lithography performance
The absorption of extreme ultraviolet (EUV) radiation by a photoresist strongly depends on
its atomic composition. Consequently, elements with a high EUV absorption cross section …
its atomic composition. Consequently, elements with a high EUV absorption cross section …
Single-digit-resolution nanopatterning with extreme ultraviolet light for the 2.5 nm technology node and beyond
N Mojarad, M Hojeij, L Wang, J Gobrecht, Y Ekinci - Nanoscale, 2015 - pubs.rsc.org
All nanofabrication methods come with an intrinsic resolution limit, set by their governing
physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography …
physical principles and instrumentation. In the case of extreme ultraviolet (EUV) lithography …
Unravelling the effect of fluorinated ligands in hybrid EUV photoresists by X-ray spectroscopy
Organic–inorganic hybrid compounds are arising as promising resist materials for extreme-
ultraviolet (EUV) lithography, a new technique introduced in the semiconductor industry for …
ultraviolet (EUV) lithography, a new technique introduced in the semiconductor industry for …
Squeezing bulk plasmon polaritons through hyperbolic metamaterials for large area deep subwavelength interference lithography
G Liang, C Wang, Z Zhao, Y Wang… - Advanced Optical …, 2015 - Wiley Online Library
Hyperbolic metamaterial composed of SiO2/Al films are explored to squeeze out bulk
plasmon polaritons (BPPs) to produce large area and uniform deep subwavelength …
plasmon polaritons (BPPs) to produce large area and uniform deep subwavelength …
Mixed-ligand zinc-oxoclusters: efficient chemistry for high resolution nanolithography
Extreme ultraviolet lithography (EUVL) is the current technology used in the semiconductor
industry for the fabrication of integrated circuits (ICs), since it enables the further …
industry for the fabrication of integrated circuits (ICs), since it enables the further …
Progress in EUV resist screening towards the deployment of high-NA lithography
T Allenet, X Wang, M Vockenhuber… - Extreme Ultraviolet …, 2021 - spiedigitallibrary.org
The development of EUV resists is one of the major challenges for the deployment of high-
NA EUV lithography, which is on the roadmap for high-volume manufacturing of future …
NA EUV lithography, which is on the roadmap for high-volume manufacturing of future …
Progress in EUV resists towards high-NA EUV lithography
High-NA extreme ultraviolet lithography (EUVL) is going to deliver the high-volume
manufacturing (HVM) patterning for sub-7 nm nodes for the semiconductor industry. One of …
manufacturing (HVM) patterning for sub-7 nm nodes for the semiconductor industry. One of …