Electrostatic pull-in instability in MEMS/NEMS: A review

WM Zhang, H Yan, ZK Peng, G Meng - Sensors and Actuators A: Physical, 2014 - Elsevier
Pull-in instability as an inherently nonlinear and crucial effect continues to become
increasingly important for the design of electrostatic MEMS and NEMS devices and ever …

Dielectric charging induced drift in micro device reliability-a review

W Zhou, J He, X He, H Yu, B Peng - Microelectronics reliability, 2016 - Elsevier
The movement or migration of charges in dielectric materials like silicon oxide, silicon nitride
and glass, is recognized as one of the most significant causes of drift instability of MEMS …

On the influence of environment gases, relative humidity and gas purification on dielectric charging/discharging processes in electrostatically driven MEMS/NEMS …

U Zaghloul, B Bhushan, P Pons… - …, 2010 - iopscience.iop.org
In this paper, we investigate the impact of environment gases and relative humidity on
dielectric charging phenomenon in electrostatically actuated micro-and nano …

Zero-level packaged RF-MEMS switched capacitors on glass substrates

N Belkadi, K Nadaud, C Hallepee… - Journal of …, 2019 - ieeexplore.ieee.org
This article presents the design, realization and measurement of thin-film packaged RF-
MEMS switched capacitors for millimeter-wave applications. Packaging is included in the …

A study of field emission process in electrostatically actuated MEMS switches

L Michalas, A Garg, A Venkattraman… - Microelectronics …, 2012 - Elsevier
A study of field emission process in MEMS-based capacitor/switch-like geometries is
presented. High resolution current–voltage characteristics up to breakdown have been …

Determination of long time discharge current in microelectromechanical system capacitive switches

M Koutsoureli, G Papaioannou - Applied Physics Letters, 2011 - pubs.aip.org
An improved method to study the long term discharge current through the dielectric film in
microelectromechanical system capacitive switches is presented. The method allows the …

Nanoscale characterization of different stiction mechanisms in electrostatically driven MEMS devices based on adhesion and friction measurements

U Zaghloul, B Bhushan, P Pons… - Journal of colloid and …, 2011 - Elsevier
In this work, for the first time different stiction mechanisms in electrostatic micro-
electromechanical systems (MEMS) switches were studied. In these devices stiction can be …

Nanoscale characterization of the dielectric charging phenomenon in PECVD silicon nitride thin films with various interfacial structures based on Kelvin probe force …

U Zaghloul, GJ Papaioannou, H Wang… - …, 2011 - iopscience.iop.org
This work presents a novel characterization methodology for the dielectric charging
phenomenon in electrostatically driven MEMS devices using Kelvin probe force microscopy …

Investigation of silicon nitride charging

M Koutsoureli, E Papandreou, L Michalas… - Microelectronic …, 2012 - Elsevier
The paper investigates the charging mechanisms of plasma enhanced chemical vapor
deposition (PECVD) silicon nitride films, which are used in MEMS capacitive switches. The …

Kelvin probe force microscopy-based characterization techniques applied for electrostatic MEMS/NEMS devices and bare dielectric films to investigate the dielectric …

U Zaghloul, B Bhushan, F Coccetti, P Pons… - Journal of Vacuum …, 2011 - pubs.aip.org
In this study, two different characterization techniques based on Kelvin probe force
microscopy (KPFM) have been used to investigate the dielectric and substrate charging in …