Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …

Strain engineering, as a cutting-edge method for modulating the electronic structure of
catalysts, plays a crucial role in regulating the interaction between the catalytic surface and …

We report the growth of epitaxial wurtzite AlScN thin films on Si (111) substrates with a wide
range of Sc concentrations using ultra-high vacuum reactive sputtering. Sc alloying in AlN …

Aluminum nitride (AlN) continues to kindle considerable interest in various
microelectromechanical system (MEMS)-related fields because of its superior optical …

Aluminum scandium nitride (Al 1–x Sc x N) with attractive ferroelectric and piezoelectric
properties is a promising material for next-generation device applications. However, the …

Despite the considerable potential and significant promise of aluminum scandium nitride
(AlScN) ferroelectric materials for neuromorphic computing applications, challenges related …

There has been much interest in developing scandium doped aluminum nitride (ScAlN) thin
films for use in electronic devices, due to their excellent piezoMEMS response, large …

In this study, we report the effects of a multilayer architecture on the electrical breakdown
strengths and ferroelectric characteristics of 45 nm thick aluminum scandium nitride (AlScN) …

Ferroelectric memory devices such as ferroelectric memristors, ferroelectric tunnel junctions,
and field-effect transistors are considered among the most promising candidates for …

Solution-based processing of two-dimensional (2D) materials has garnered significant
interest as a facile and versatile route for the large-scalable production of 2D material films …