Recent progress in vanadium dioxide: The multi-stimuli responsive material and its applications

S Bhupathi, S Wang, Y Ke, Y Long - Materials Science and Engineering: R …, 2023 - Elsevier
The reversible phase transition in vanadium dioxide (VO 2) with light, heat, electric,
magnetic, and mechanical stimuli is the enabling concept to function as a smart material. It is …

In-memory computing with emerging nonvolatile memory devices

C Cheng, PJ Tiw, Y Cai, X Yan, Y Yang… - Science China Information …, 2021 - Springer
The von Neumann bottleneck and memory wall have posed fundamental limitations in
latency and energy consumption of modern computers based on von Neumann architecture …

A review of Mott insulator in memristors: The materials, characteristics, applications for future computing systems and neuromorphic computing

Y Ran, Y Pei, Z Zhou, H Wang, Y Sun, Z Wang, M Hao… - Nano Research, 2023 - Springer
Mott insulator material, as a kind of strongly correlated electronic system with the
characteristic of a drastic change in electrical conductivity, shows excellent application …

[HTML][HTML] The metal–insulator phase change in vanadium dioxide and its applications

H Lu, S Clark, Y Guo, J Robertson - Journal of Applied Physics, 2021 - pubs.aip.org
Vanadium dioxide is an unusual material that undergoes a first-order Metal–Insulator
Transition (MIT) at 340 K, attracting considerable interest for its intrinsic properties and its …

Femtojoule‐power‐consuming synaptic memtransistor based on Mott transition of multiphasic vanadium oxides

S Iqbal, LT Duy, H Kang, R Singh… - Advanced Functional …, 2021 - Wiley Online Library
To realize the potential of Mott transition of multiphasic vanadium oxides (VOx) for memory
applications, the development of VOx memtransistors on SiO2 wafer is introduced. Through …

Assessment of functional performance in self-rectifying passive crossbar arrays utilizing sneak path current

Z Chen, X Zhao, C Bengel, F Liu, K Li, S Menzel… - Scientific Reports, 2024 - nature.com
Self-rectifying memristive devices have emerged as promising contenders for low-power in-
memory computing, presenting numerous advantages. However, characterizing the …

Volatile threshold switching memristor: An emerging enabler in the AIoT era

W Zuo, Q Zhu, Y Fu, Y Zhang, T Wan, Y Li… - Journal of …, 2023 - iopscience.iop.org
With rapid advancement and deep integration of artificial intelligence and the internet-of-
things, artificial intelligence of things has emerged as a promising technology changing …

Understanding of the volatile and nonvolatile switching in Ag-based memristors

X Ding, P Huang, Y Zhao, Y Feng… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Memristors, possessing volatile and nonvolatile switching characteristics, exhibit great
potential for high-density data storage and neuromorphic computing system. However, the …

Self-activation neural network based on self-selective memory device with rectified multilevel states

Z Wang, Q Zheng, J Kang, Z Yu… - … on Electron Devices, 2020 - ieeexplore.ieee.org
In a digital-analog mixed neuromorphic system, various complex peripheral circuits may
offset the integration and energy efficiency advantages of the dense crossbar. To simplify the …

Forming-free plant resistive random access memory based on the Coulomb blockade effect produced by gold nanoparticles

L Wang, J Xie, D Wen - Physical Chemistry Chemical Physics, 2023 - pubs.rsc.org
Resistive random access memory has been widely studied as a powerful candidate for
building future memories and realizing high-efficiency artificial neuromorphic systems. In this …