[图书][B] X-ray diffraction by polycrystalline materials
R Guinebretière - 2013 - books.google.com
This book presents a physical approach to the diffraction phenomenon and its applications
in materials science. An historical background to the discovery of X-ray diffraction is first …
in materials science. An historical background to the discovery of X-ray diffraction is first …
Role of thermal strain in the metal-insulator and structural phase transition of epitaxial films
The metal-insulator switching characteristics of VO 2 play a crucial role in the performances
of VO 2-based devices. In this paper we study high-quality (010)-oriented epitaxial films …
of VO 2-based devices. In this paper we study high-quality (010)-oriented epitaxial films …
Structural and electrical properties of large area epitaxial VO2 films grown by electron beam evaporation
Large area (up to 4 squared inches) epitaxial VO 2 films, with a uniform thickness and
exhibiting an abrupt metal-insulator transition with a resistivity ratio as high as 2.85× 10 4 …
exhibiting an abrupt metal-insulator transition with a resistivity ratio as high as 2.85× 10 4 …
Identification of LiNbO3, LiNb3O8 and Li3NbO4 phases in thin films synthesized with different deposition techniques by means of XRD and Raman spectroscopy
A Bartasyte, V Plausinaitiene, A Abrutis… - Journal of Physics …, 2013 - iopscience.iop.org
Phase composition of epitaxial/textured LiNbO 3 films on sapphire substrates, grown by
pulsed laser deposition, atmospheric pressure metal organic chemical vapor deposition and …
pulsed laser deposition, atmospheric pressure metal organic chemical vapor deposition and …
Lattice strain in irradiated materials unveils a prevalent defect evolution mechanism
Modification of materials using ion beams has become a widespread route to improve or
design materials for advanced applications, from ion doping for microelectronic devices to …
design materials for advanced applications, from ion doping for microelectronic devices to …
Interplay between atomic disorder, lattice swelling, and defect energy in ion-irradiation-induced amorphization of SiC
A combination of experimental and computational evaluations of disorder level and lattice
swelling in ion-irradiated materials is presented. Information obtained from x-ray diffraction …
swelling in ion-irradiated materials is presented. Information obtained from x-ray diffraction …
RaDMaX: a graphical program for the determination of strain and damage profiles in irradiated crystals
RaDMaX (radiation damage in materials analysed with X-ray diffraction) is a user-friendly
graphical program that allows the determination of strain and damage depth profiles in ion …
graphical program that allows the determination of strain and damage depth profiles in ion …
Engineering strain and conductivity of MoO3 by ion implantation
DR Pereira, C Díaz-Guerra, M Peres, S Magalhaes… - Acta Materialia, 2019 - Elsevier
Abstract α-MoO 3 lamellar crystals are implanted with 170 keV oxygen ions at room
temperature and with fluences between 1× 10 12 cm− 2 and 1× 10 17 cm− 2, in order to …
temperature and with fluences between 1× 10 12 cm− 2 and 1× 10 17 cm− 2, in order to …
Statistical nature of atomic disorder in irradiated crystals
Atomic disorder in irradiated materials is investigated by means of x-ray diffraction, using
cubic SiC single crystals as a model material. It is shown that, besides the determination of …
cubic SiC single crystals as a model material. It is shown that, besides the determination of …
Interpretation of the two-components observed in high resolution X-ray diffraction ω scan peaks for mosaic ZnO thin films grown on c-sapphire substrates using pulsed …
O Durand, A Letoublon, DJ Rogers, FH Teherani - Thin Solid Films, 2011 - Elsevier
X-ray scattering methods were applied to the study of thin mosaic ZnO layers deposited on c-
Al 2 O 3 substrates using Pulsed Laser Deposition. High Resolution (HR) studies revealed …
Al 2 O 3 substrates using Pulsed Laser Deposition. High Resolution (HR) studies revealed …