Amorphous and polycrystalline photoconductors for direct conversion flat panel X-ray image sensors

S Kasap, JB Frey, G Belev, O Tousignant, H Mani… - Sensors, 2011 - mdpi.com
In the last ten to fifteen years there has been much research in using amorphous and
polycrystalline semiconductors as x-ray photoconductors in various x-ray image sensor …

Amorphous silicon active pixel sensor readout circuit for digital imaging

KS Karim, A Nathan… - IEEE transactions on …, 2003 - ieeexplore.ieee.org
The most widely used architecture in large-area amorphous silicon (a-Si) flat panel imagers
is a passive pixel sensor (PPS), which consists of a detector and a readout switch. While the …

Above-threshold parameter extraction and modeling for amorphous silicon thin-film transistors

P Servati, D Striakhilev, A Nathan - IEEE Transactions on …, 2003 - ieeexplore.ieee.org
This paper presents modeling and parameter extraction of the above-threshold
characteristics of hydrogenated amorphous silicon (a-Si: H) thin-film transistors (TFTs) in …

Organic inkjet-patterned memory array based on ferroelectric field-effect transistors

TN Ng, B Russo, B Krusor, R Kist, AC Arias - Organic Electronics, 2011 - Elsevier
An inkjet-patterned, flexible organic memory array was demonstrated using non-volatile
ferroelectric field-effect transistors which remained functional below 0.6% tensile strain …

Low frequency noise in long channel amorphous In–Ga–Zn–O thin film transistors

TC Fung, G Baek, J Kanicki - Journal of Applied Physics, 2010 - pubs.aip.org
We investigated the low-frequency noise properties in the inverted-staggered amorphous In–
Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) with the silicon dioxide (SiO 2) gate dielectric …

Active pixel concept combined with organic photodiode for imaging devices

S Tedde, ES Zaus, J Furst, D Henseler… - IEEE Electron Device …, 2007 - ieeexplore.ieee.org
The active pixel concept is a promising architecture for imaging systems. We report on the
electrooptical characterization of a hybrid organic active pixel sensor (APS) where an …

Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors

Y Li, LE Antonuk, Y El-Mohri, Q Zhao, H Du… - Journal of Applied …, 2006 - pubs.aip.org
The effects of x-ray irradiation on the transfer and noise characteristics of excimer-laser-
annealed polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been examined at …

Static characteristics of a-Si: H dual-gate TFTs

P Servati, KS Karim, A Nathan - IEEE Transactions on Electron …, 2003 - ieeexplore.ieee.org
This paper examines the effect of the top gate on the static characteristics of dual-gate
hydrogenated amorphous silicon (a-Si: H) thin-film transistors (TFTs). Both forward and …

Flat panel imagers with pixel level amplifiers based on polycrystalline silicon thin-film transistor technology

JP Lu, K Van Schuylenbergh, J Ho, Y Wang… - Applied physics …, 2002 - pubs.aip.org
We report here the realization of a large-area compatible, flat panel imager with pixel level
amplifiers. The imager is based on excimer-laser crystallized, polycrystalline silicon (poly-Si) …

An a-Si active pixel sensor (APS) array for medical X-ray imaging

MH Izadi, O Tousignant, MF Mokam… - IEEE transactions on …, 2010 - ieeexplore.ieee.org
Active pixel sensor (APS) circuits are an alternate to passive pixel sensor (PPS) circuits,
which, while common in CMOS technology, have yet to be incorporated into commercial …