This article reviews the piezoelectric properties of III-nitrides with emphasis on GaN, InN,
and their ternary alloys. After a short literature survey we concentrate on semipolar and …

Gallium nitride (GaN) is an extremely promising wide band gap semiconductor material for
optoelectronics and high temperature, high power electronics. Actually, GaN is probably the …

Since there is no GaN bulk single crystal available, the whole technological development of
GaN based devices relies on heteroepitaxy. Numerous defects are generated in the …

The concepts in this book will provide a comprehensive overview of the current state for a
broad range of nitride semiconductor devices, as well as a detailed introduction to selected …

In this work, we present a novel growth method to obtain high structural quality GaN films on
sapphire by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE). Our purpose is …

The morphology and crystalline quality of p-GaN shells on coaxial GaInN/GaN multiple
quantum shell (MQS) nanowires (NWs) were investigated using metal–organic chemical …

Selective‐area epitaxy is used to form three‐dimensional (3D) GaN structures providing
semipolar crystal facets. On full 2‐in. sapphire wafers we demonstrate the realization of …

InGaN-based LEDs on convex lens-shaped GaN microstructures are fabricated. The gently
sloping microstructures enable us to employ simple device processes similar to those for …

Boules and large wafers of the III-Nitrides of AlN, GaN and InN having a low density of
dislocations are not available. As such, essentially all nitride films and device structures are …

Growth of Mg-doped GaN on trench-patterned GaN films consists of competing lateral and
vertical growth fronts that result in regions with different electronic properties. Under typical …