AlGaN deep ultraviolet (DUV) with the high induced polarization emitters effect degrades the
performance of the laser diode (LD) and brings a higher injection current density, resulting in …

As part of this study, we present a study on the act of electrically driven Laser Diode (LD)
using trinary Aluminum Gallium Nitride (AlGaN) with optimized doping concentrations. To …

As eco-friendly light sources, AlGaN-based deep ultraviolet laser diodes (AlGaN DUV LDs)
employing aluminum gallium nitride that emit between 200 and 300 nm have seen various …

In this study, we aim to improve the efficiency of AlGaN-based deep-UV-LD by thickness
grading and composition grading of the quantum barrier. We proposed the structure of DUV …

The optoelectronic performance of ultraviolet-C laser diodes is improved by using AlN layer
instead of AlGaN electron blocking layer in our proposed laser heterostructure. The large …

A deep ultraviolet (DUV) laser diode (LD) is an advanced semiconductor device that
produces light in the DUV spectrum and is ideal for a variety of industrial and scientific …

P-AlGaN EBLs are usually used to control the overflow of electrons from the multiple
quantum wells (MQWs) in AlGaN-based deep ultraviolet (DUV) edge-emitting laser diodes …

Low electron leakage and high optical confinement are challenges in the AlGaN-based
deep-ultraviolet (DUV) laser diode (LD). In this paper, optimal thickness of electron blocking …

This paper proposes quantum barriers (QBs) with linearly decreasing/increasing Al molar
fraction to improve the performance of AlGaN-based deep ultraviolet laser diodes (DUV …

Electron leakage and hole injection have a significant impact on the optical output power of
lasers. A compositionally graded electron blocking layer (EBL) structure is proposed. It has …