Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates
We present self-assembly of InAs/InAlAs quantum dots by the droplet epitaxy technique on
vicinal GaAs (111) A substrates. The small miscut angle, while maintaining the symmetries …
vicinal GaAs (111) A substrates. The small miscut angle, while maintaining the symmetries …
Enhanced luminescence and optical performance through strain minimization in self-assembled InAs QDs using dual quaternary-ternary/ternary-quaternary capping
Theoretical simulations are necessary to scientifically progress, envisage and gain the first
hand knowledge of the properties of semiconductor quantum dot (QD) structure. The impact …
hand knowledge of the properties of semiconductor quantum dot (QD) structure. The impact …
Tailoring the optical properties of InAs/GaAs quantum dots by means of GaAsSb, InGaAs and InGaAsSb strain reducing layers
Abstract Self-organized InAs QDs have been grown by Molecular Beam Epitaxy with
different strain reducing layers (SRL) having nearly similar lattice mismatches to GaAs. The …
different strain reducing layers (SRL) having nearly similar lattice mismatches to GaAs. The …
[HTML][HTML] Linear and nonlinear intersubband optical properties of direct band gap GeSn quantum dots
Intersubband optical transitions, refractive index changes, and absorption coefficients are
numerically driven for direct bandgap strained GeSn/Ge quantum dots. The linear, third …
numerically driven for direct bandgap strained GeSn/Ge quantum dots. The linear, third …
Optimization of dot layer periodicity through analysis of strain and electronic profile in vertically stacked InAs/GaAs Quantum dot heterostructure
Constraints of the single layer quantum dot (QD) led to the investigation of alternative
heterostructures for the next generation high performance optoelectronic devices. In this …
heterostructures for the next generation high performance optoelectronic devices. In this …
Application of Green's functions and difference equations in theoretical analyses of nanostructures
V Sajfert, JP Šetrajčić - Topics in Nanoscience: Part I: Basic Views …, 2022 - World Scientific
The standard theory of the solid state physics of the 20th century is based on methods that
are “borrowed” from the physics of the continuum, ie, from field theory [1–5]. What enabled …
are “borrowed” from the physics of the continuum, ie, from field theory [1–5]. What enabled …
Size and shape dependent optical properties of InAs quantum dots
In this study Electronic states and optical properties of self assembled InAs quantum dots
embedded in GaAs matrix have been investigated. Their carrier confinement energies for …
embedded in GaAs matrix have been investigated. Their carrier confinement energies for …
[HTML][HTML] O-band emitting InAs quantum dots grown by MOCVD on a 300 mm Ge-buffered Si (001) substrate
The epitaxy of III-V semiconductors on silicon substrates remains challenging because of
lattice parameter and material polarity differences. In this work, we report on the Metal …
lattice parameter and material polarity differences. In this work, we report on the Metal …
[HTML][HTML] Design of strain-engineered GeSn/GeSiSn quantum dots for mid-IR direct bandgap emission on Si substrate
Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been
numerically investigated aiming to study their potentiality towards direct bandgap emission …
numerically investigated aiming to study their potentiality towards direct bandgap emission …
Photoluminescence (PL) characterization of InAs/GaAs quantum dots (QDs): A theoretical study
It is well known that before using thin films in applications, it is necessary to carry out their
characterization because it provides informations on the degree of their quality. In this …
characterization because it provides informations on the degree of their quality. In this …