Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …

Abstract Effects of reactor pressure on the epitaxial lateral overgrowth (ELO) via low
pressure MOVPE have been studied in relation to the growth temperature. For the ELO GaN …

The invention relates to a process for the selective covering of predetermined crystal facets
(crystal planes) during the growth, and in particular the epitaxial growth of group III nitrides …

Facet structures of GaN grown by epitaxial lateral overgrowth (ELO) via low-pressure
metalorganic vapor-phase epitaxy (LP-MOVPE) are controlled by growth conditions such as …

Iron doped GaN layers were grown by metalorganic chemical vapor deposition (MOCVD)
using ferrocene as the Fe precursor. Specular films with concentrations up to 1.7× 10 19 …

Gallium nitride (GaN) is an extremely promising wide band gap semiconductor material for
optoelectronics and high temperature, high power electronics. Actually, GaN is probably the …

Since there is no GaN bulk single crystal available, the whole technological development of
GaN based devices relies on heteroepitaxy. Numerous defects are generated in the …

Magnesium incorporation during the molecular-beam epitaxy growth of wurtzite GaN is
found to invert the Ga-polar (0001) face to the N-polar face. The polarity is identified based …

The self-assembled growth of GaN nanorods on Si (111) substrates by plasma-assisted
molecular beam epitaxy under nitrogen-rich conditions is investigated. An amorphous …

Selective-area growth (SAG) and epitaxial lateral overgrowth (ELO) techniques used in
group III nitride epitaxy are reviewed. Structurally controlled GaN in line patterns and dot …